二氧化钒薄膜的制备技术及应用进展(特邀)
Preparation Technology and Application of Vanadium Dioxide Thin Films(Invited)
查看参考文献100篇
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文摘
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二氧化钒具有从金属相到绝缘体相发生可逆相变的特性,在68℃,分子结构从单斜结构转换成金红石结构,同时伴随着光学、电学和热学性质的快速突变,使得二氧化钒被广泛应用于热光调控、光学防护、红外伪装、离子电池和化学传感等领域。本文总结了二氧化钒薄膜新颖的制备技术、研究现状以及各种技术的优缺点,分析了应力、掺杂、缺陷等因素对二氧化钒相变特性的显著影响,归纳了二氧化钒的相变机理和支持相关相变机理的证据,列举了二氧化钒在不同热门领域中的应用,并对二氧化钒的发展方向和应用前景进行了总结和展望。 |
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其他语种文摘
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Vanadium dioxide(VO_2)has attracted many attention of researchers since it was discovered in 1959 to have the reversible phase transition from metal to insulator.Before and after the phase transition,its optical,electrical and thermal properties change dramatically.Therefore,vanadium dioxide is widely used in the fields of thermal light control,infrared and optical protection camouflage,ion batteries and chemical sensors.In order to enable domestic researchers to have a more comprehensive and in-depth understanding of this interesting material with broad application prospects,this paper reviews the latest progress of vanadium dioxide film preparation technology in the past five years and its applications in different hot areas.First,we introduce the structure and phase transition mechanism of VO_2.When the temperature exceeds 68℃,VO_2 will undergo a phase transition from insulator to metal,and its crystal structure will change from monoclinic insulator to rutile metal structure.At the same time,because the crystal structure of vanadium dioxide changes after phase transformation,its corresponding energy band structure also changes.Because the crystal structure and energy band structure of VO_2 change suddenly before and after the phase transition,people devote themselves to exploring the physical mechanism of its phase transition.Up to now,there have been many research on the VO_2 phase transition mechanism,and also various research methods and devices,but there is no accurate and unified statement.In this paper,we focus on three mainstream explanations of phase transition mechanisms:the first is electron-electron correlation mechanism,i.e.electron correlation driven Mott transition;The second is the electron phonon interaction mechanism,i.e.crystal structure driven Peierls transition.The third is that electron correlation and crystal structure jointly drive VO_2 phase transition,and the supporting evidence is summarized.In addition,the phase transition characteristics of vanadium dioxide films are closely related to the preparation technology and process parameters.In the second part of this paper,many new technologies for preparing VO_2 thin films,such as highenergy pulsed magnetron sputtering,atomic layer deposition,ink-jet printing,spray pyrolysis and laser direct writing,are introduced in detail,and the advantages and disadvantages of each technology are briefly described.This part provides ideas for researchers on the preparation of materials at the initial stage of experimental design.In performance evaluation,this parameter thermal hysteresis width ΔH reflects the excellent degree of phase transition characteristics of VO_2 thin films ΔH will attenuate the phase transition behavior,reduce the working efficiency of the uncooled detector,and also reduce the sensitivity of the near-infrared optical response to temperature,thus reducing ΔH is of great significance for the wide application of VO_2 thin films in optoelectronic devices.The third part of this paper focuses on the regulating of the thermal hysteresis width ΔH.Many factors,such as stress,doping and defects,are analyzed.The stress factor is mainly reflected in the selection of substrate materials when preparing films.Different substrates will produce films with different orientations,and different orientations will show different properties.Both doping and oxygen defects change the phase transition properties of the materials by distorting the lattice of the materials in the films. |
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来源
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光子学报
,2022,51(10):1016002 【核心库】
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DOI
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10.3788/gzxb20225110.1016002
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关键词
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二氧化钒
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薄膜
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金属-绝缘体相变
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晶型结构
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制备技术
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地址
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1.
西北工业大学光电与智能研究院, 西安, 710072
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中国科学院西安光学精密机械研究所, 西安, 710119
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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1004-4213 |
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学科
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一般工业技术 |
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基金
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国家自然科学基金
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陕西省自然科学基金
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文献收藏号
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CSCD:7351350
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