Structure and topological transport in Pb-doping topological crystalline insulator SnTe (001) film
查看参考文献27篇
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文摘
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Topological crystalline insulator (TCI) as a new type of topological materials has attracted extensive research interests for its tunable topological properties.Due its symmetry topological protection essence,the structure investigation provides a solid basement for tuning its topological transport properties.On SrTiO_3 (111) substrate,the SnTe film was found to be epitaxial growth only along [001] while not [111] direction.The detailed structural study was performed and a structural model was proposed to elucidate epitaxial growth of the SnTe (001) film.The transport properties of SnTe (001) film were further investigated and a typical weak anti-localization effect was observed.By Pb-doping into SnTe,the bulk carriers were inhibited and its topological surface states were strengthened to induce the enhanced surface transport contribution.With tunable multiple transport channels from the even Dirac cones,the TCI SnTe film systems will have the potential application in future spintronics devices. |
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来源
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Journal of Materials Science & Technology
,2020,44:223-228 【核心库】
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DOI
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10.1016/j.jmst.2019.10.033
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关键词
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Topological crystalline insulator
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Surface state
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SnTe
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地址
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1.
Institute of Metal Research,Chinese Academy of Sciences, Shenyang National Laboratory for Materials Science, Shenyang, 110016
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University of Chinese Academy of Sciences, Beijing, 100049
3.
School of Materials Science and Engineering,University of Science and Technology of China, Hefei, 230026
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语种
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英文 |
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文献类型
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研究性论文 |
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ISSN
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1005-0302 |
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学科
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金属学与金属工艺 |
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基金
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supported financially by the National Natural Science Foundation of China
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the National Key R&D Program of China
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文献收藏号
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CSCD:6722419
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