Electrical conductivity and viscosity of cryolite electrolytes for solar grade silicon (Si-SoG) electrowinning
太阳能级硅电沉积用冰晶石熔盐的电导率和黏度
查看参考文献28篇
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文摘
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Electrical conductivity of molten binary and ternary mixtures based on the system NaF-AlF_3-SiO_2 was investigated by means of a tube–cell (made of pyrolytic boron nitride) with stationary electrodes. Viscosity of the binary system Na_3AlF_6-SiO_2 was measured by computerized torsion pendulum method. It was found that conductivity and viscosity varied linearly with temperature in all investigated mixtures. Obtained content dependence of electrical conductivity (isotherms) was divided into two parts. First, one represented the content region up to 10%(mole fraction) of SiO_2;second, the region was with a higher content of SiO_2 (from 10%up to 40%). While the conductivity considerably decreased with content of SiO_2 in the second part; it surprisingly rose in the low content range. A small addition of SiO_2 to the molten cryolite (up to 10%) could slightly increase viscosity, but had no influence on the slope of this dependence since it is responsible for a glassy-networks formation in the melt. Further addition of SiO_2 to the molten cryolite had a huge effect on the viscosity. |
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其他语种文摘
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以热解碳化硼管作电导池,用固定电导池常数法研究由NaF-AlF_3-SiO_2构成的二元系和三元系熔盐的电导率;用扭摆法测定Na_3AlF_6-SiO_2二元系的黏度。研究发现,所研究熔盐体系的电导率和黏度均与温度呈直线关系。Na_3AlF_6-SiO_2二元系的电导率与SiO_2含量关系曲线可分为0~10%和10%~40%(摩尔分数)两段,当SiO_2含量超过10%之后,电导率随着SiO_2含量的增加而快速下降,而当SiO_2含量小于10%时,电导率随着SiO_2含量的增加而缓慢增加。在 SiO_2含量大于10%的冰晶石熔盐中添加少量的 SiO_2,熔盐的黏度增加,但增加的趋势基本相同,这与熔盐中形成玻璃网状结构的离子团有关。当在冰晶石熔盐中继续增大 SiO_2含量到50%时,黏度发生急剧变化。 |
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来源
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Transactions of Nonferrous Metals Society of China
,2014,24(12):3944-3948 【核心库】
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DOI
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10.1016/s1003-6326(14)63554-8
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关键词
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electrical conductivity
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viscosity
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solar grade silicon
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molten salts
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molten cryolite-silica melts
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地址
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1.
Institute of Inorganic Chemistry, Slovak Academy of Sciences, Dubravska cesta 9, Slovakia, Bratislava, SK–84536
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Institute of Inorganic Chemistry, Technology and Materials, Slovak University of Technology, Radlinskeho 9, Slovakia, Bratislava, SK–81237
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School of Materials and Metallurgy, Northeastern University, Shenyang, 110819
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语种
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英文 |
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文献类型
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研究性论文 |
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ISSN
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1003-6326 |
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学科
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金属学与金属工艺 |
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文献收藏号
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CSCD:5329670
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参考文献 共
28
共2页
|
|
1.
Istratov A A. Control of metal impurities in "dirty" multicrystalline silicon for solar cells.
Mater Sci Eng B,2006,134:282-286
|
CSCD被引
7
次
|
|
|
|
|
2.
Elwell D. Electrolytic production of silicon.
J Appl Electrochem,1988,18(1):15-22
|
CSCD被引
9
次
|
|
|
|
|
3.
Elwell D. Electrodeposition of solar silicon.
Sol Energ Mat Sol C,1982,6:123-145
|
CSCD被引
4
次
|
|
|
|
|
4.
Monnier R. Recherches sur le raffinage electrolytique du silicium.
Helv Chim Acta, (in French),1964,47(6):345-353
|
CSCD被引
4
次
|
|
|
|
|
5.
Olson J M. A semipermeable anode for silicon electrorefinning.
J Electrochem Soc,1981,128(12):2698-2699
|
CSCD被引
8
次
|
|
|
|
|
6.
Grjotheim K. Electrolytic deposition of silicon and silicon alloys.
Canadian Metallurgical Quarterly,1971,10:79-82
|
CSCD被引
2
次
|
|
|
|
|
7.
Monnier R.
Refining of silicon and germanium-: US, 3254010,1966
|
CSCD被引
1
次
|
|
|
|
|
8.
Monnier R.
Dual cell refining of silicon and germanium: US, 3219561,1965
|
CSCD被引
1
次
|
|
|
|
|
9.
Boen R. The electrodeposition of silicon in fluoride melts.
J Appl Electrochem,1983,13:277-288
|
CSCD被引
6
次
|
|
|
|
|
10.
Grjotheim K. The electrodeposition of silicon from cryolite melts.
Light Metals,1982:333-341
|
CSCD被引
1
次
|
|
|
|
|
11.
Olson K S. Electrodeposition of crystalline silicon films from alkali fluoride mixtures.
Electrochem Soc Trans,2010,33:429-438
|
CSCD被引
1
次
|
|
|
|
|
12.
Oishi T. Process for solar silicon production by molten salt electrolysis using aluminium-silicon liquid alloy.
J Electrochem Soc,2011,158(9):E93-E99
|
CSCD被引
4
次
|
|
|
|
|
13.
Bieber A L. Silicon electrodeposition in molten fluorides.
Electrochim Acta,2012,62:282-289
|
CSCD被引
7
次
|
|
|
|
|
14.
Belyaev A I.
Fiziko-khimicheskie protsessy pri elektrolize alyuminiya, (in Russian),1947
|
CSCD被引
1
次
|
|
|
|
|
15.
Sokhanvaran S. Charge transport properties of cryolite-silica melts.
Electrochim. Acta,2012,66:239-244
|
CSCD被引
2
次
|
|
|
|
|
16.
Weil D F. The 1010 °C and 800 °C isothermal section in the system Na_3AlF_6-Al_2O_3-SiO_2.
J Electrochem Soc,1964,111:582-585
|
CSCD被引
2
次
|
|
|
|
|
17.
Korenko M. Electrical conductivity of systems based on Na_3AlF_6-SiO_2-melt.
Chem Pap,2013,67:1350-1354
|
CSCD被引
4
次
|
|
|
|
|
18.
Danek V.
Physicochemical analysis of molten electrolytes,2006:370
|
CSCD被引
1
次
|
|
|
|
|
19.
Abramov G A.
Teoreticheskie osnovy elektrometallurgii alyuminia. Metallurgizdat, (in Russian),1953
|
CSCD被引
1
次
|
|
|
|
|
20.
Belyaev A I.
Fyzicheskaya khimia rasplavlennykh solei, (in Russian),1957
|
CSCD被引
1
次
|
|
|
|
|
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