Electrodeposition and growth mechanism of preferentially orientated nanotwinned Cu on silicon wafer substrate
查看参考文献37篇
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文摘
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Homogeneous columnar Cu film with fully embedded nanotwins was successfully fabricated on Ti/Cu seed layer on silicon wafer. The nanotwins with thickness of tens of nanometers are generally parallel to the silicon surface, showing a strong (111) preferred orientation. The acid concentration was found to be important in influencing the formation of nanoscale twins. By adjusting the acid concentration, the nanotwins can be induced from the top columnar grain to middle columnar grain and reach the bottom equiaxed grain, and a microstructural transformation model was given. A theory focusing on the cathode overpotential was proposed to reveal the effect of acid concentration on the growth mechanism of nanoscale twins. An appropriate adsorption proportion of hydrogen on cathode (acid concentration 17 ml L~(-1)) could increase the overpotential which supplies adequate nucleation energy for nanoscale twins formation. |
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来源
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Journal of Materials Science & Technology
,2018,34(10):1885-1890 【核心库】
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DOI
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10.1016/j.jmst.2018.01.016
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关键词
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Electrodeposition
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Nanotwinned Cu
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Growth mechanism
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Acid adsorption
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地址
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1.
Institute of Metal Research, Chinese Academy of Sciences, Shenyang, 110016
2.
University of Chinese Academy of Sciences, Beijing, 100049
3.
Institute of Scientific and Industrial Research, Osaka University, Japan, Osaka, 5670047
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语种
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英文 |
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文献类型
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研究性论文 |
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ISSN
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1005-0302 |
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学科
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金属学与金属工艺 |
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基金
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国家自然科学基金
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the Osaka University Visiting Scholar Program
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文献收藏号
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CSCD:6335120
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