基于大信号模型的L波段400W高效GaN功率放大器设计
GaN L-Band 400W Power Amplifier Design Using Large Signal Model
查看参考文献10篇
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文摘
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文章阐述了用精确的GaN Angelov模型设计了一款L波段400W内匹配率放大器.选用SiC衬底的GaN器件是为了获得大功率输出以及高效率性能.为了精确设计放大器,采用脉冲I-V测试和多偏置的S参数测试建立起高压GaN大信号模型.采用模型设计的GaN放大器输入输出电路集成在17.4mm×24mm的封装管壳里.最终采用单枚55mm栅宽GaN管芯设计的放大器在48V漏压,100μs脉宽,10%占空比偏置下在1.2~1.4GHz输出功率大于400W,功率增益大于15dB,最高功率附加效率达到81.3%,这是国内L波段400W微波功率放大器的最高效率报道,验证了模型的准确度,实现了极好的电路性能. |
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其他语种文摘
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This paper describes a L-band 400W gallium nitride(GaN)internally matched power amplifier using an accurate large signal Angelov model.The large gate-periphery GaN devices on SiC substrate are used for achieving the large output power and high efficiency.For designing exactly the power amplifier,the large signal GaN model is founded using measured pulse I-V and S parameters of different bias conditions.Based on the large signal model,the input and output matching circuits and one 55mm GaN transistor are integrated in a 17.4mm×24mm ceramic package.The amplifier finally has the pulse output power of over 400W,the power gain of over 15dB across the band of 1.2-1.4GHz and the max power added efficiency is 81.3% under the pulse drain bias voltage(Vds)of 48V,the duty is 10% with the pulse width of 100μs.The results show that the character of realized amplifier is consistent with the simulation result,which fully indicates the veracity of the developed model.And this is the most highest efficiency of a 400W power amplifier achieved in L-band. |
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来源
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电子学报
,2020,48(2):398-402 【核心库】
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DOI
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10.3969/j.issn.0372-2112.2020.02.024
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关键词
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放大器
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GaN
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模型
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内匹配
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L波段
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地址
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1.
东南大学, 江苏, 南京, 210096
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南京电子器件研究所, 江苏, 南京, 210016
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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0372-2112 |
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学科
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电子技术、通信技术 |
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文献收藏号
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CSCD:6770080
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参考文献 共
10
共1页
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1.
钟世昌. Ku波段60WAlGaN/GaN功率管.
固体电子学研究与进展,2014,34(4):350-353
|
CSCD被引
4
次
|
|
|
|
|
2.
Michale Mikulla. Manufacturable GaN SiC substrates and GaN epi wafer supply chain.
European Microwave Integrated Circuit Conference,2014:221-224
|
CSCD被引
1
次
|
|
|
|
|
3.
Zhong Shichang. AlGaN/GaN HEMT with over 110W output power for x-Band.
European Microwave Integrated Circuit Conference,2008:91-94
|
CSCD被引
1
次
|
|
|
|
|
4.
Wang Houyu. Effects of the Fe-doped GaN buffer in AlGaN/GaN HEMTs on SiC substrate.
IEEE International Conference on Electron Devices and Solid-State Circuits,2015:645-648
|
CSCD被引
1
次
|
|
|
|
|
5.
Rochette S. A high efficiency 140W power amplifier based on a single GaN HEMT device for space applications in L-band.
European Microwave Integrated Circuit Conference,2012:127-130
|
CSCD被引
1
次
|
|
|
|
|
6.
蔺兰峰. L波段GaN大功率高效率准单片功率放大器.
固体电子学研究与进展,2017,37(6):384-388
|
CSCD被引
1
次
|
|
|
|
|
7.
蒙燕强. 一种塔台用高压宽脉冲GaN功放设计与实现.
数字技术与应用,2018,37(1):183-184
|
CSCD被引
1
次
|
|
|
|
|
8.
卢啸. L波段GaN高效率功率放大器技术研究.
全国微波毫米波会议,2013:1238-1241
|
CSCD被引
1
次
|
|
|
|
|
9.
李飞. L波段GaN自偏压功率放大器.
太赫兹科学与电子信息学报,2018,16(5):918-921
|
CSCD被引
1
次
|
|
|
|
|
10.
李玉龙. 1.25 GHz高效率F类射频功率放大器.
微电子学与计算机,2015,32(10):143-147
|
CSCD被引
3
次
|
|
|
|
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