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钴氮共掺杂TiO_2薄膜的制备及其光电化学性质
Preparation of cobalt and nitrogen codoped TiO2 thin films and their photoelctrochemical performance

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施晶莹 1   冷文华 2   程小芳 2   张昭 2   张鉴清 2   曹楚南 2  
文摘 采用溶胶-凝胶法分别制备未掺杂和钴掺杂TiO_2溶胶,室温下将其分别与三乙胺反应制得氮掺杂和(Co,N)共掺杂的TiO_2溶胶,然后通过浸渍-提拉法在钛片上成膜,经烧结获得掺杂光电极.采用XRD、SEM、XPS和紫外-可见光谱和光电流作用谱等对电极进行表征,并探讨其光电响应机理.结果表明:TiO_2共掺杂后并未引起TiO_2能带边缘位置发生明显改变,N主要以NO_x形式掺杂;(Co,N)共掺杂TiO_2薄膜电极的可见光电响应比单掺杂的高,这主要归因于共掺杂TiO_2薄膜电极的比表面积增大、光吸收性能改善、界面电荷转移速率提高以及共掺杂元素的协同作用等.
其他语种文摘 The undoped and cobalt doped TiO_2 sols were prepared using sol-gel method. After addition of triethylamine into the respective sol at room temperature, nitrogen and (Co, N) codoped TiO_2 sols were obtained. Various thin film electrodes were prepared from the sols using dip-coating approach. These films were characterized by XRD, SEM, XPS, UV-Vis absorption spectroscopy and photocurrent action spectra, and their photoelectrochemical response mechanisms under visible light were also discussed. The results show that the (Co, N) codoped TiO_2 electrode exhibits an enhanced incident photon to current efficiency under visible light in comparison with the Co-doped and N doped TiO_2 alone. Codoping dose not shift the position of energy band edges of the electrodes where nitrogen exists in the form of NO_x. The enhanced photoresponse observed can be attributed to the increase in surface area, light absorbance, interface charge transfer rate of photogenerated carriers and cooperation effect between the doping species.
来源 中国有色金属学报 ,2007,17(9):1536-1542 【核心库】
关键词 TiO2薄膜 ; 钴氮共掺杂 ; 光电化学 ; 可见光
地址

1. 福建泉州师范学院,化学系, 泉州, 362000  

2. 浙江大学,化学系, 杭州, 310027

语种 中文
文献类型 研究性论文
ISSN 1004-0609
学科 化学
基金 国家自然科学基金 ;  福建省泉州市科技局重点项目
文献收藏号 CSCD:2937195

参考文献 共 21 共2页

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引证文献 5

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CSCD被引 8

2 刘国聪 Al掺杂TiO_2介孔材料的合成、表征和光催化性能 中国有色金属学报,2011,21(12):3100-3107
CSCD被引 5

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