透明导电膜ZnO:Al(ZAO)的组织结构与特性
Microstructure and properties of transparent conductive oxide ZnO:Al(ZAO) thin films
查看参考文献60篇
文摘
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ZnO:Al(ZAO)是一种简并半导体氧化物薄膜材料,具有高的载流子浓度和大的光学禁带宽度,因而具有优异的电学和光学性能,极具应用价值。对于其能级高度简并的ZAO半导体薄膜材料,在较低的温度下,离化杂质散射占主导地位;在较高的温度下,晶格振动散射将成为主要的散射机制;晶界散射仅当晶粒尺寸较小(与电子的平均自由程相当)时才起作用。本文介绍了ZAO薄膜的制备方法、晶体结构特性、电学和光学性能以及载流子的散射机制。 |
其他语种文摘
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ZnO:Al(ZAO) is one of highly degenerate semi-conductive oxide films. Due to both high carrier concentration and large optical band gap, ZnO:Al has outstanding electrical and optical properties, and is emerging as a most potential alternative candidate for transparent conducting materials. The crystal structure and preparation of Al-doped ZnO films, as well as their electrical and optical properties and corresponding scattering mechanism are summarized in this paper. For highly degenerate ZnO:Al semiconductor thin films, it was revealed that the ionized impurity scattering dominated the hall mobility of this in the low-temperature range; while the lattice vibration became a major scattering mechanism in the high-temperature range. The grain boundary scattering only played a major role in the ZAO films with small grain size (as compared to the electron mean free path). The proposal for the future research is also offered. |
来源
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材料研究学报
,2002,16(2):113-120 【核心库】
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关键词
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透明导电氧化物
;
简并半导体
;
ZAO薄膜
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散射机制
;
电学光学性质
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地址
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中国科学院金属研究所
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语种
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中文 |
文献类型
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研究性论文 |
ISSN
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1005-3093 |
学科
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一般工业技术 |
基金
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国家自然科学基金
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文献收藏号
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CSCD:961173
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