HF/CrO_3溶液对AlGaAs的选择性湿法刻蚀应用于楔型结构的制备
Selective Wet Etching of HF/CrO_3 Solution on AlGaAs: Application ot Vertical Taper Structures
查看参考文献12篇
文摘
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利用动态掩膜腐蚀技术,研究了HF/CrO_3腐蚀液对各种不同组分的Al_xGa_(1-x)As (x = 0.3, 0.5, 0.65)的腐蚀速率及腐蚀表面形貌。随着HF(48wt%)/CrO_3(33wt%)的体积比由0.01变化到0.138,相应的腐蚀液对Al_(0.8)Ga_(0.2)As/Al_(0.3)Ga_(0.7)As的选择性由179降到8.6;通过调节腐蚀液的选择性,在Al_(0.3)Ga_(0.7)As外延层上制备出了倾角从0.32°到6.61°的各种斜面。当HF(48wt%)/CrO_3(33wt%)的体积比为0.028时,Al组分分别为0.3、0.5和0.65时,相应的腐蚀表面的均方根粗糙度为1.8、9.1和19.3nm。另外,还分析了腐蚀机理与腐蚀表面形貌之间的关系。 |
其他语种文摘
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The etch rate and surface morphology of Al_xGa_(1-x)As (x = 0.3, 0.5, 0.65) versus composition of CrO_3/HF solutions are studied by using the dynamic etch mask technique. The selectivity, which is defined as a ratio of the etch rate, decreases from 179 to 8.6 for Al_(0.8)Ga_(0.2)As/Al_(0.3)Ga_(0.7)As with the volume ratio of HF(48wt%)/CrO_3 (33wt%) increasing from 0.01 to 0.138. The selective etching is applied to the fabrication of the vertical taper structures with angles ranging from 0.32° to 6.61° on Al_(0.3)Ga_(0.7)As epitaxial layer. The surface roughness on Al_xGa_(1-x)As(x = 0.3, 0.5, 0.65), which is etched by CrO_3/HF at volume ratio of 0.028, are 1.8, 9.1 and 19.3nm respectively. The relation between the etching mechanism and the surface morphology is also discussed. |
来源
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半导体学报
,2002,23(2):208-212 【核心库】
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关键词
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动态掩膜腐蚀
;
选择性
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化学湿法腐蚀
;
楔形结构
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地址
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1.
北京邮电大学, 北京, 100876
2.
中国科学院半导体研究所, 北京, 100083
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语种
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中文 |
文献类型
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研究性论文 |
ISSN
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0253-4177 |
学科
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电子技术、通信技术 |
基金
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国家自然科学基金国家杰出青年科学基金
;
国家自然科学基金
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文献收藏号
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CSCD:955399
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