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HF/CrO_3溶液对AlGaAs的选择性湿法刻蚀应用于楔型结构的制备
Selective Wet Etching of HF/CrO_3 Solution on AlGaAs: Application ot Vertical Taper Structures

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黄辉 1   黄永清 1   任晓敏 1   高俊华 2   罗丽萍 2   马骁宇 2  
文摘 利用动态掩膜腐蚀技术,研究了HF/CrO_3腐蚀液对各种不同组分的Al_xGa_(1-x)As (x = 0.3, 0.5, 0.65)的腐蚀速率及腐蚀表面形貌。随着HF(48wt%)/CrO_3(33wt%)的体积比由0.01变化到0.138,相应的腐蚀液对Al_(0.8)Ga_(0.2)As/Al_(0.3)Ga_(0.7)As的选择性由179降到8.6;通过调节腐蚀液的选择性,在Al_(0.3)Ga_(0.7)As外延层上制备出了倾角从0.32°到6.61°的各种斜面。当HF(48wt%)/CrO_3(33wt%)的体积比为0.028时,Al组分分别为0.3、0.5和0.65时,相应的腐蚀表面的均方根粗糙度为1.8、9.1和19.3nm。另外,还分析了腐蚀机理与腐蚀表面形貌之间的关系。
其他语种文摘 The etch rate and surface morphology of Al_xGa_(1-x)As (x = 0.3, 0.5, 0.65) versus composition of CrO_3/HF solutions are studied by using the dynamic etch mask technique. The selectivity, which is defined as a ratio of the etch rate, decreases from 179 to 8.6 for Al_(0.8)Ga_(0.2)As/Al_(0.3)Ga_(0.7)As with the volume ratio of HF(48wt%)/CrO_3 (33wt%) increasing from 0.01 to 0.138. The selective etching is applied to the fabrication of the vertical taper structures with angles ranging from 0.32° to 6.61° on Al_(0.3)Ga_(0.7)As epitaxial layer. The surface roughness on Al_xGa_(1-x)As(x = 0.3, 0.5, 0.65), which is etched by CrO_3/HF at volume ratio of 0.028, are 1.8, 9.1 and 19.3nm respectively. The relation between the etching mechanism and the surface morphology is also discussed.
来源 半导体学报 ,2002,23(2):208-212 【核心库】
关键词 动态掩膜腐蚀 ; 选择性 ; 化学湿法腐蚀 ; 楔形结构
地址

1. 北京邮电大学, 北京, 100876  

2. 中国科学院半导体研究所, 北京, 100083

语种 中文
文献类型 研究性论文
ISSN 0253-4177
学科 电子技术、通信技术
基金 国家自然科学基金国家杰出青年科学基金 ;  国家自然科学基金
文献收藏号 CSCD:955399

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引证文献 2

1 辛国锋 半导体激光器阵列隔离槽的湿法腐蚀 半导体学报,2003,24(10):1089-1092
被引 0 次

2 张秋波 垂直腔面发射激光器中GaAs/AlGaAs的选择性刻蚀技术研究 中国激光,2020,47(4):0401001
被引 0 次

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