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文摘
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研究了空间实用背场Si太阳电池和GaAs/Ge太阳电池性能随质子辐照注量1 * 10~9 ～ 5 * 10~(13) cm~(-2)的变化。实验表明，两种太阳电池的电性能随辐照注量增加有不同的衰降趋势，背场Si太阳电池性能参数I_(sc)、V_(oc)和P_(max)衰降变化快，辐照注量为2 * 10~(10)cm~(-2)时，P_(max)就已衰降为原值的75％；而GaAs/Ge电池对应相同的衰降辐照注量达8 * 10~(11)cm~(-2), 且其I_(sc)、V_(oc)和P_(max)衰降变化起初缓慢，当辐照注量接近3 * 10~(12)~(-2)时才迅速下降。背场Si电池和GaAs/Ge电池性能衰降分别与擀子辐照引入的E_v + 0.14eV及E_v + 0.43eV和E_c - 0.41eV深能级有关。 |
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其他语种文摘
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The proton irradiation effects on the back-field Si solar cell and GaAs/Ge solar cell for space use are studied. The solar cells are irradiated at room temperature by 10MeV protons at fluences ranging from 1 * 10~9 to 5 * 10~(13)cm~(-2) and then the electric properties are measured at AM0. It is shown that the degradation of the performances for two kinds of the solar cells is different as the proton irradiation fluences increasing. The P_(max) for the back-field Si solar cell is reduced to 75% of its initial value under 2 * 10~(10)cm~(-2), but GaAs/Ge solar cell has the same degradation until the irradiation fluence reaches up to 8 * 10~(11) cm~(-2). The degradation rates of parameters I_(sc)、V_(oc), and P_(max) of GaAs/Ge solar cell are smaller than that of the back-field Si solar cell in whole irradiation fluence range. Thus the irradiation tolerance of GaAs/Ge solar cell is better than that of the back-field Si solar cell. The degradations of the electric properties are relative to the Proton irradiation-induced defects E_v + 0.14eV and E_v + 0.43eV in the irradiated Si cell, and E_c - 0.41eV in the irradiated GaAs/Ge cell. |
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来源
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半导体学报
,2002,23(1):49-52 【核心库】
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关键词
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Si太阳电池
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GaAs/Ge太阳电池
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质子辐照
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地址
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1.
北京师范大学, 射线束技术与材料改性教育部重点实验室, 北京, 100875
2.
北京师范大学低能核物理研究所, 北京, 100875
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北京大学技术物理系, 北京, 100871
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信息产业部第18研究所, 天津, 300381
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中国科学院半导体研究所, 北京, 100083
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中国原子能科学研究院, 北京, 102413
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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0253-4177 |
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学科
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电工技术 |
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基金
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国家教育部高等学校国家重点实验室和教育部重点实验室访问学者专项基金
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文献收藏号
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CSCD:955373
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