γ射线及质子辐照导致CCD光谱响应退化的机制
Mechanism of Spectrum Response Degradation in CCD's Exposed to γ-ray and Proton
查看参考文献20篇
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文摘
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光谱响应是表征CCD性能的重要参数。为了研究辐射环境对CCD光谱响应产生影响的规律及物理机制,开展了不同粒子辐照实验,对CCD光谱响应曲线的退化形式及典型波长下CCD光响应的退化情况进行了分析。辐射效应对CCD光谱响应的影响可以分为电离总剂量效应和位移效应导致的退化,本文从这两种辐射效应出发,采用~(60)Co-γ射线及质子两种辐照条件,研究了CCD光谱响应的退化规律。针对460 nm(蓝光)和700 nm(红光)等典型CCD光响应波长,从辐射效应导致的损伤缺陷方面分析了CCD光谱响应退化的物理机制。研究发现,在~(60)Co-γ射线辐照时CCD光谱响应曲线变化是由于暗信号增加导致的,而质子辐照导致CCD对700 nm波长的光响应退化明显大于460 nm波长的光响应,且10 MeV质子导致的损伤比3 MeV质子更明显,表明位移损伤缺陷易导致CCD光谱响应退化。结果表明,电离总剂量效应主要导致CCD光谱响应整体变化,而位移效应则导致不同波长光的响应差异增大。 |
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其他语种文摘
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Spectral response is one of the important parameters of CCD. In order to study the effects and physical mechanism of spectral response of CCD being affected by radiation environmental,the different particles irradiation tests are done,also the degradation form of CCDs' spectral response and degradation of CCDs' light response on typical wavelength are investigated. The decays of spectral response in CCD exposed to radiation environment consist of total ionizing dose effects and displacement damage effects. This paper investigated the degradation law and physics mechanism of spectral response in CCD irradiated by ~(60)Co-γ and proton. In view of the typical CCD optical response wavelength of 460 nm (blue light) and 700 nm (red light),the physical mechanism of the degradation of CCD spectral response was analyzed from the radiation induced damage defects. The results suggest that the CCDs' spectral response curve change induced by ~(60)Co-gamma ray is due to the dark signal increases. The CCDs' spectral response degradation induced by proton is significantly higher at 700 nm wavelength light response than at 460 nm. The degradation is more obvious at 10 MeV proton than 3 MeV proton. So it is clearly that displacement damage defects easily lead to CCD spectral response degradation. The results indicate that the total ionizing dose effects inducing a global degradation of spectrum response,while displacement damage inducing the contrast of spectrum response on different wave length significantly. |
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来源
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发光学报
,2018,39(2):244-250 【核心库】
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DOI
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10.3788/fgxb20183902.0244
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关键词
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电荷耦合器件
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电离效应
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位移损伤
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光谱响应
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地址
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中国科学院新疆理化技术研究所, 中国科学院特殊环境功能材料与器件重点实验室,新疆电子信息材料与器件重点实验室, 新疆, 乌鲁木齐, 830011
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重庆光电技术研究所, 重庆, 400060
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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1000-7032 |
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学科
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物理学;自动化技术、计算机技术 |
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基金
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新疆维吾尔自治区青年科技创新人才培养工程
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中国科学院西部之光人才培养计划
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中国科学院西部之光人才培养计划
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文献收藏号
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CSCD:6176486
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