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质子辐射下互补金属氧化物半导体有源像素传感器暗信号退化机理研究
Dark signal degradation in proton-irradiated complementary metal oxide semiconductor active pixel sensor

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汪波 ¹ 李豫东 ¹ 郭旗 ¹ ^* 刘昌举 ² 文林 ¹ 任迪远 ¹ 曾骏哲 ¹ 玛丽娅 ¹

文摘	对某国产0.5 μm工艺制造的互补金属氧化物半导体有源像素传感器进行了10 MeV质子辐射试验, 当辐射注量达到预定注量点时, 采用离线的测试方法, 定量测试了器件暗信号的变化情况. 试验结果表明, 随着辐射注量的增加暗信号迅速增大. 采用MULASSIS (multi-layered shielding simulation software)软件计算了电离损伤剂量和位移损伤剂量, 在与γ辐射试验数据对比的基础上, 结合器件结构和工艺参数, 建立了分离质子辐射引起的电离效应和位移效应理论模型, 深入分析了器件暗信号的退化机理. 研究结果表明, 对该国产器件而言, 电离效应导致的表面暗信号和位移效应导致的体暗信号对整个器件暗信号退化的贡献大致相当.
其他语种文摘	In this paper, we discuss the dark signal increase in complementary metal oxide semiconductor (CMOS) active pixel sensor due to proton-induced damage, and present the basic mechanism that may cause failure. When the fluence of protons reaches a predetermined point, the change of dark signal of the device is measured offline. The experimental result shows that as the fluence of protons increases, mean dark signal increases rapidly. The main reason for dark signal degradation is: 1) the ionizing damage causes a build-up of oxide trapped charge and interface state at the Si-SiO_2 interface. The creation of the interface traps (with energy levels within the silicon bandgap), which can communicate with carriers in the silicon, gives rise to the thermal generation of the electron-hole pairs and, hence increasing the dark signals; 2) when protons pass through the sensor, there is a possibility of collisions with silicon lattice atoms in the bulk silicon. In these collisions, atoms can be displaced from their lattice sites and defects are formed. These resulting defects can give rise to states with energy levels within the forbidden bandgap. The increasing of dark signal is therefore one of the prominent consequences of bulk displacement. We use multi-layered shielding simulation software to calculate the ionization damage dose and displacement damage dose. Based on the comparison of the test data of gamma radiation, combined with the device structure and process parameters, a theoretical model for separation proton-induced ionization and displacement damage effects on CMOS active pixel is constructed, and the degradation mechanism of the mean dark signal is investigated. The result shows that the contribution of ionization effect induced surface dark signal and the contribution of displacement damage induced bulk dark signal to dark signal degradation of the whole device are roughly equal in this domestic CMOS active pixel.
来源	物理学报 ,2015,64(8):084209-01-084209-07 【核心库】
DOI	10.7498/aps.64.084209
关键词	互补金属氧化物半导体有源像素传感器 ; 暗信号 ; 质子辐射 ; 位移效应
地址	1. 中国科学院新疆理化技术研究所, 中国科学院特殊环境功能材料与器件重点实验室;;新疆电子信息材料与器件重点实验室, 乌鲁木齐, 830011 2. 重庆光电技术研究所, 重庆, 400060
语种	中文
文献类型	研究性论文
ISSN	1000-3290
学科	物理学
基金	国家自然科学基金
文献收藏号	CSCD:5408741

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引证文献 3 篇

1 王帆基于4晶体管像素结构的互补金属氧化物半导体图像传感器总剂量辐射效应研究物理学报,2016,65(2):024212-1-024212-6
被引 0 次

2 张科科基于天基光学探测图像初析南大西洋异常区影响中国空间科学技术,2015,35(5):33-40,49
被引 5 次

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