Preparation and thermal-sensitive characteristic of copper doped n-type silicon material
查看参考文献19篇
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文摘
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Copper doped n-type single-crystal silicon materials are prepared by a high temperature diffusion process. The electrical and thermal-sensitive characteristic of materials is investigated under different experimental conditions. The results show that the maximum resistivity of 46.2, Ω·cm is obtained when the sample is treated at 1200 °C for 2 h with the surface concentration of the copper dopant source being 1.83 × 10~(-7) mol/cm~2. The copper doped n-type silicon material presents a negative temperature-sensitive characteristic and the B values are about 3010–4130 K. |
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来源
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Journal of Semiconductors
,2015,36(1):013004-1-013004-4 【核心库】
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DOI
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10.1088/1674-4926/36/1/013004
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关键词
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single-crystal silicon
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deep level impurity
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copper
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地址
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Xinjiang Technical Institute of Physics & Chemistry of CAS, Key Laboratory of Functional Materials and Devices for Special Environments of CAS;;Xinjiang Key Laboratory of Electronic Information Materials and Devices, Urumqi, 830011
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语种
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英文 |
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文献类型
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研究性论文 |
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ISSN
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1674-4926 |
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学科
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电子技术、通信技术 |
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基金
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国家863计划
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the National Natural Science Foundation of Xinjiang
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文献收藏号
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CSCD:5356118
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