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新型相变材料Ti_(0.5)Sb_2Te_3刻蚀工艺及其机理研究
Study on Etching Process and Mechanism of New Phase Change Material Ti_(0.5)Sb_2Te_3
查看参考文献10篇
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文摘
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采用CF_4和Ar混合气体研究了新型相变材料Ti_(0.5)Sb_2Te_3(TST)的刻蚀特性, 重点优化和研究了刻蚀气体总流速、CF_4/Ar的比例、压力和功率等工艺参数对刻蚀形貌的影响。结果表明, 当气体总流量为50 sccm、CF_4浓度为26%﹑刻蚀功率为400 W和刻蚀压力为13.3 Pa时, 刻蚀速度达到126 nm/min, TST薄膜刻蚀图形侧壁平整而且垂直度好(接近90°)﹑刻蚀表面平整(RMS为0.82 nm)以及刻蚀的片内均匀性等都非常好。 |
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其他语种文摘
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The dry etching characteristic of new Ti_(0.5)Sb_2Te_3 (TST) phase change material was investigated by using the CF_4 and Ar gas mixture. The research mainly focuses on how to optimize the experimental parameters such as gas flow rate within the chamber, CF_4/Ar flow ratio, the chamber background pressure and the incident RF power applied to the lower electrode. The results show that CF_4 mainly plays a role of chemical etching and Ar plays a role of physical bombardment. The etching rate of TST films increases with the increasing concentration of CF_4 in the gas mixture. The etching chamber pressure has less effect on the TST film etching speed, while the etching power has larger effect. The etch rate is up to 126 nm/min with the smooth etched surface (RMS=0.82 nm) and TST film profile is almost vertical (approaching 90°) using optimized etching parameters, including the total flow rate of 50 sccm, CF_4 concentration of 26%, power of 400 W and pressure of 13.3 Pa. |
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来源
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无机材料学报
,2013,28(12):1364-1368 【核心库】
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DOI
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10.3724/sp.j.1077.2013.13210
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关键词
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新型相变材料
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干法刻蚀
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CF_4+Ar气体
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刻蚀速度
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地址
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中国科学院上海微系统与信息技术研究所, 信息功能材料国家重点实验室, 上海, 200050
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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1000-324X |
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学科
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化学工业 |
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基金
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国家973计划
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国家自然科学基金
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上海市科委项目
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文献收藏号
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CSCD:5010341
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参考文献 共
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