1eV带隙GaNAs/InGaAs短周期超晶格太阳能电池的设计
The design of 1 eV band-gap of GaNAs/InGaAs short-period super-lattice solar cell
查看参考文献12篇
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文摘
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使用In,N分离的GaNAs/InGaAs短周期超晶格作为有源区是未来实现高效率GaInNAs基太阳能电池的重要结构之一.同时,考虑到具有1eV带隙的GaInNAs子电池的重要性以及与Ge衬底晶格匹配的优势,基于Ge衬底上的四结及多结太阳能电池无疑荣景可期.为在实验上较好地控制所需带隙,我们利用传输矩阵方法从理论上计算了实现1eV带隙下超晶格的周期数、垒层厚度以及In,N的浓度,并进一步讨论分析1eV带隙下的多个相关参数的对应关系以及超晶格的应变状态. |
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其他语种文摘
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The GaNAs/InGaAs short-period super-lattice(SPSL) with a feature of space separation in In and N constituent and equivalent 1 eV band-gap is one of important structures as an active region to achieve high efficiency of GaInNAs -based solar cell in the future. To experimentally realize the required band-gap for high conversion efficiency in multijunction solar cells on Ge substrate, we demonstrate a propagation matrix method to calculate some dependences of GaNAs/InGaAs SPSLs on their structural parameters. The results show that the GaNAs/InGaAs SPSL structures can be flexible to obtain the 1 eV energy gap by a reasonable choice of the period number, barrier thickness as well as concentrations of In and N. Additionally, the calculation illustrates a relationship of respective modulation from those super-lattice structures for the SPSL active region which emits or absorbs light at 1 eV in energy. |
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来源
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中国科学. 物理学
, 力学, 天文学,2013,43(8):930-935 【核心库】
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DOI
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10.1360/132012-962
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关键词
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GaNAs/InGaAs短周期超晶格
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传输矩阵方法
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太阳能电池
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超晶格参数
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地址
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中国科学院苏州纳米技术与纳米仿生研究所, 中国科学院纳米器件与应用重点实验室, 苏州, 215123
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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1674-7275 |
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学科
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电工技术 |
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基金
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国家自然科学基金
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苏州市国际合作项目
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文献收藏号
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CSCD:4916655
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参考文献 共
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