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Ge_2Sb_2Te_5的化学机械抛光研究进展
Research and Development of Chemical Mechanical Planarization for Ge_2Sb_2Te_5

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何敖东 1   刘波 1   宋志棠 1   冯高明 2   朱南飞 2   任佳栋 2   吴关平 2   封松林 1  
文摘 相变存储器由于具有非易失性、高速度、低功耗等优点被认为最有可能成为下一代存储器的主流产品,Ge_2Sb_2Te_5(GST)作为一种传统相变材料已经被广泛应用在相变存储器中,而GST的化学机械抛光作为相变存储器生产的关键工艺目前已被采用.本工作综述了有关GST的化学机械抛光技术研究进展,讨论了GST化学机械抛光过程的影响因素,如下压力、转速、抛光垫、磨料、氧化剂、表面活性剂等,并对目前GST的化学机械抛光机理进行了归纳,进一步展望了GST的化学机械抛光技术的发展前景.
其他语种文摘 Phase change memory (PCM) is considered a major candidate for next-generation memory due to its nonvolatile, fast program access times, low consumable power. So far chalcogenide Ge_2Sb_2Te_5 (GST), as a traditional phase material, has been widely adopted and investigated for PCM application. Recently, chemical mechanical planarization (CMP) of GST as a key technique for confined structure has been applied in the fabrication of PCM. In this paper, research and development of CMP for GST is reviewed firstly and the impact factors of down force, rotation velocity, polishing pads, and the slurry on the GST CMP are discussed. For the mechanical parameter, the removal rate (RR) of GST increases with the increasing of pressure and rotation velocity firstly, and then reaches saturation or slightly decreases. The gentle mechanical parameter is a better choice for GST CMP due to its lower hardness. With regard to polishing pads, GST polished using Politex reg can attain a better surface quality, and almost no residue and scratches can be found, compared with IC1010. The oxidizer of slurry, such as H_2O_2, (NH_4)_2S_2O_8, KMnO_4 and FeCl_3 have a great influence on the GST performance, the oxidization capacity of each element in GST alloy is different. Among these elements, Ge is preferentially oxidized, but Te is hard oxidized due to their different electronegativity. RR strongly depends on the pH of slurry, it reaches high RR in the strong acidic and alkaline condition. The stable species for GST in the slurries at pH 2 are GeO_2, Sb_2O_3 and Te both for the situations with and without H_2O_2, while they are HGeO_3~-, SbO_3~- and TeO-3~(2-) for those at pH 11. Usually, the GST polished follows a corrosion polishing mechanism and cyclic reaction polishing mechanism in the different conditions. For corrosion polishing mechanism, it involves the direct touching between the GST film and the abrasives of slurry. For the cyclic reaction polishing mechanism, it involves passivation by an oxidized GST layer firstly, then mechanical polishing between the oxidized GST surface and abrasives, and repassivation. Although the GST CMP process exhibits better electrical performance for the PCM, it was very difficult to get the desirable GST CMP solutions due to the complicated GST material characteristics such as density, composition, doped component, and so on. The suitable slurry composition, optimal polishing process and suitable polishing pad need to be investigated further, especially below 30 nm complementary metal oxide semiconductor process node.
来源 化学学报 ,2013,71(8):1111-1117 【核心库】
DOI 10.6023/a13030326
关键词 Ge_2Sb_2Te_5 ; 化学机械抛光 ; 相变存储器
地址

1. 中国科学院上海微系统与信息技术研究所, 信息功能材料国家重点实验室, 上海, 200050  

2. 中芯国际集成电路制造公司, 上海, 201203

语种 中文
文献类型 综述型
ISSN 0567-7351
学科 电子技术、通信技术
基金 国家973计划 ;  国家集成电路重大专项 ;  国家自然科学基金 ;  上海市科委项目
文献收藏号 CSCD:4908895

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