串口型铁电存储器总剂量辐射损伤效应和退火特性
Serial ferroelectric memory ionizing radiation effects and annealing characteristics
查看参考文献16篇
|
文摘
|
对一款商用串口I2C型铁电存储器进行了~(60)Coγ 辐射和退火实验, 研究了铁电存储器的总剂量效应和退火特性. 使用了超大规模集成电路测试系统测试了铁电存储器的DC, AC, 功能参数, 分析了辐射敏感参数在辐射和退火过程中的变化规律. 实验结果表明: 总剂量辐射在器件内产生大量氧化物陷阱电荷, 造成了铁电存储器外围控制电路MOS管阈值向负向漂移, 氧化物陷阱电荷引入附加电场使铁电薄膜受肖特基发射或空间电荷限制电流的作用, 产生辐射感生漏电流. 由于浅能级亚稳态的氧化物陷阱电荷数量上多于深能级氧化物陷阱电荷, 使得器件功能和辐射敏感参数在常温退火过程中快速恢复. |
|
其他语种文摘
|
Ferroelectric random memory was irradiated and annealed by ~(60)Coγ-rays, total ionizing dose (TID) failure mechanism and annealing characteristics of the device were analyzed. DC, AC and function parameters of the memory were tested in radiation and annealing by very large scale integrated cicuit (VLSI) test system, the radiation-sensitive parameters were obtained through analyzing the test data. Ionizing radiation produced a large number of oxide trapped charges, leading MOS transistor threshold to the negative drift in memory peripheral control circuit. Additional electric field was introduced in the ferroelectric film, and leakage current was produced since the Schottky emission or space-charge-limited current occurred. The number of shallower levels and metastable state oxide trapped charges are more than the deep level oxide trapped charge, so that the device functions and the radiation-sensitive parameters were restored in the annealing. |
|
来源
|
物理学报
,2013,62(15):156107-1-156107-6 【核心库】
|
|
DOI
|
10.7498/aps.62.156107
|
|
关键词
|
铁电存储器
;
总剂量辐射
;
退火特性
|
|
地址
|
中国科学院新疆理化技术研究所, 新疆电子信息材料与器件重点实验室, 乌鲁木齐, 830011
|
|
语种
|
中文 |
|
文献类型
|
研究性论文 |
|
ISSN
|
1000-3290 |
|
学科
|
物理学;自动化技术、计算机技术 |
|
文献收藏号
|
CSCD:4897834
|
参考文献 共
16
共1页
|
|
1.
Philpy S C.
Aerospace Conference Proceedings,2000:377
|
被引
1
次
|
|
|
|
|
2.
Verbeck C.
Radiation and its Effects on Components and Systems St Malo,1993:166
|
被引
1
次
|
|
|
|
|
3.
MacLeod T C.
Non-Volatile Memory Technology Symposium (NVMTS) Portland OR,2009:24
|
被引
1
次
|
|
|
|
|
4.
Schwank J R.
Nuclear Science,1990,37:1703
|
被引
1
次
|
|
|
|
|
5.
Nguyen D N.
Radiation Effects Data Workshop Vancouver BC,2001:57
|
被引
1
次
|
|
|
|
|
6.
Zanata M.
Nuclear Science,2008,52:3237
|
被引
1
次
|
|
|
|
|
7.
唐重林. 铁电材料的核辐射效应.
材料导报,2007,8:33
|
被引
4
次
|
|
|
|
|
8.
Li Y S.
Applied Physics Letters,2009,94:42903
|
被引
1
次
|
|
|
|
|
9.
娄利飞. PZT铁电材料的总剂量辐照效应实验研究.
强激光与粒子束,2007,19:2091
|
被引
6
次
|
|
|
|
|
10.
蔡道林.
博士学位论文,2008
|
被引
1
次
|
|
|
|
|
11.
朱劲松(译).
铁电存储器,2004:78, 82
|
被引
1
次
|
|
|
|
|
12.
郑玉展. 不同发射极面积npn晶体管高低剂量率辐射损伤特性.
物理学报,2009,58:5572
|
被引
18
次
|
|
|
|
|
13.
Mcwhorter P J.
Nuclear Science,1990,37:1682
|
被引
1
次
|
|
|
|
|
14.
Vorotilov K A.
Physics of the Solid State,2012,54:894
|
被引
4
次
|
|
|
|
|
15.
Fan C.
U.S. Patent 6376259B1,2002
|
被引
1
次
|
|
|
|
|
16.
高博.
物理学报,2011,60:436
|
被引
1
次
|
|
|
|
|
了解气象卫星更多信息，请访问