X射线对金硅界面剂量增强效应的模拟研究
Monte Carlo simulation of dose enhancement effect of X-ray at Au/Si interface
查看参考文献14篇
文摘
|
本文以光子与物质的相互作用机制为基础,论述了剂量增强效应的基本原理。用蒙特卡罗方法研究了金和硅交界时X射线入射产生的剂量梯度分布,通过MCNP5程序建立了一个三维的金硅界面结构模型,计算了不同厚度的金在金硅界面的剂量增强因子。计算结果表明:当X射线为30–300 keV时,界面附近硅一侧存在较大的剂量增强效应。金的厚度影响界面附近的剂量增强效果,当金的厚度为0–10μm时,剂量增强因子随金的厚度增大;当金的厚度超过10μm后,剂量增强因子随金厚度的增加而减少。 |
其他语种文摘
|
Background: The dose enhancement factor of X-ray was found in 1970s, because of its bad damage to electronic devices. Purpose: This paper is mainly to calculate the dose-enhancement factor at Au/Si interfaces. Methods: The gradient distribution of dose with X-rays has been studied at and near the interface of Au/Si by Monte-Carlo simulation of particle transportation. The mechanism of dose enhancement is discussed based on the principles of interaction of photon with matter. A 3D Au/Si model has been established by MCNP5 program and the dose-enhancement factors of different thicknesses Au/Si interfaces were calculated by Monte Carlo method. Results: The calculated results demonstrate that there exists a stronger dose-enhancement in the Si side near the interface when the energy of X-ray is 30–300 keV. Conclusions: When the thickness of Au is 0–10μm, dose-enhancement factor of X-ray increases along with the increase of the thickness of Au, when the thickness of Au exceeds 10μm, dose-enhancement factor of X-ray decreases along with the increase of the thickness of Au. |
来源
|
核技术
,2013,36(6):060201-1-060201-6 【核心库】
|
关键词
|
蒙特卡罗方法
;
剂量增强因子
;
界面
;
能量沉积
;
体元
|
地址
|
1.
新疆大学物理科学与技术学院, 新疆电子信息材料与器件重点实验室, 乌鲁木齐, 830046
2.
中国科学院新疆理化技术研究所, 新疆电子信息材料与器件重点实验室, 乌鲁木齐, 830011
3.
新疆大学物理科学与技术学院, 乌鲁木齐, 830046
|
语种
|
中文 |
文献类型
|
研究性论文 |
ISSN
|
0253-3219 |
学科
|
原子能技术 |
基金
|
国家自然科学基金
|
文献收藏号
|
CSCD:4876160
|
参考文献 共
14
共1页
|
1.
Chadsey W L.
X-ray dose enhancement. VOL. I: Summary Report RADC-TR-76-159, ADAC26248
|
被引
1
次
|
|
|
|
2.
Wall J. Gamma dose distribution at and near the interface of different materials.
IEEE Transactions on Nuclear Science,1970,17(6):305-309
|
被引
1
次
|
|
|
|
3.
Garth J C. Monte Carlo analysis of dose profiles near photon irradiated material interfaces.
IEEE Transactions on Nuclear Science,1975,22(6):2562-2567
|
被引
6
次
|
|
|
|
4.
Garth J C. The role of scattered radiation in the dosimetry of small device structures.
IEEE Transactions on Nuclear Science,1980,27(5):1459-1565
|
被引
1
次
|
|
|
|
5.
Long D M. Dose enhancement effects in semiconductor devices.
IEEE Transactions on Nuclear Science,1982,29(5):1980-1986
|
被引
5
次
|
|
|
|
6.
Kerric K G. Experimental determination of the low-enegry spectral component of Cobalt-60 sources.
IEEE Transactions on Nuclear Science,1985,32(8):4356-4359
|
被引
1
次
|
|
|
|
7.
Long D M.
Handbook for dose enhancement effects in electronic devices. Rome air development center report, RADC-TR-83-84,1983
|
被引
1
次
|
|
|
|
8.
Garth J C. X-ray produced charge depotion and dose in dielectrics near interfaces including space field and conductivity effects.
IEEE Transactions on Nuclear Science,1974,21(8):235-242
|
被引
1
次
|
|
|
|
9.
许淑艳.
蒙特卡罗方法在实验核物理中的应用,2006
|
被引
46
次
|
|
|
|
10.
Judith F.
MCNP-5 general Monte Carlo N-particle transport code,2002
|
被引
1
次
|
|
|
|
11.
卢希庭.
原子核物理,2000:63-68
|
被引
2
次
|
|
|
|
12.
何承发. ↑(60)Co γ射线在界面附近金中的剂量分布.
核技术,1997,20(3):143-147
|
被引
2
次
|
|
|
|
13.
Attix F H.
Introduction to radiological physics and radiation dosimetry,1986:261
|
被引
1
次
|
|
|
|
14.
Garth J C. High energy extension of the semi-empirical model for energy deposition at interfaces.
IEEE Transactions on Nuclear Science,1981,28(6):4145-4152
|
被引
1
次
|
|
|
|
|