帮助 关于我们

返回检索结果

外加电场对GaN/Al_xGa_(1-x)N双量子阱中性施主束缚能的影响
Influence of electric field on binding energy of neutral donor in symmetrical GaN/Al_xGa_(1-x)N double quantum wells

查看参考文献17篇

孟婧 1   王诲龙 1   龚谦 2   封松林 2  
文摘 在有效质量包络函数理论下,利用变分法计算了未加电场以及加入电场后GaN/Al_xGa_(1-x)双量子阱中施主杂质各种情况下的束缚能,讨论了双量子阱中间势垒高度、施主杂质位置对杂质束缚能的影响。给出了加入电场后施主位置不同时的束缚能和波函数,以及量子阱宽度不同时的束缚能,并且计算了未加电场和加入电场后中间势垒高度变化以及宽度不同时的束缚能。当双量子阱中间垒宽一定时,束缚能随着阱宽的变化会出现一个峰值。在阱宽一定时,随着中间垒宽度的增加,束缚能逐渐减小,并在垒宽增加到一定宽度时双量子阱情况与单量子阱情况相似,束缚能不再明显变化。计算结果对设计和研究GaN/Al_xGa_(1-x)N量子阱发光和探测器件有一定的参考价值。
其他语种文摘 Under the effectives-mass envelope-function theory, the binding energy of the system in GaN/Al_xGa_(1-x)N symmetric double quantum wells were theoretically calculated using the variational method. The influence of applied external electric fields, barrier height, quantum well width and the position of donors on the binding energies of donor impurities were investigated. The potential quantum well energy changes significantly with applied external electric field. The binding energy and wave functions with the donor in different positions were presented with and without external electric field. Variations of donor binding energy with the centre barrier width were also calculated. With the fixed middle barrier of double quantum wells, the binding energy increases until it reaches a maximum value, and then decreases as the well width increases. The results are meaningful in the design of optoelectronic devices based on GaN/Al_xGa_(1-x)N quantum well structures.
来源 量子电子学报 ,2013,30(3):360-366 【核心库】
关键词 光电子学 ; 束缚能 ; 中性施主 ; 变分法 ; 打靶法 ; 对称双量子阱
地址

1. 曲阜师范大学物理工程学院, 山东, 曲阜, 273165  

2. 中国科学院上海微系统与信息技术研究所, 信息功能材料国家重点实验室, 上海, 200050

语种 中文
文献类型 研究性论文
ISSN 1007-5461
学科 物理学
基金 国家自然科学基金 ;  山东省自然科学基金 ;  信息功能材料国家重点实验开放课题资助
文献收藏号 CSCD:4856184

参考文献 共 17 共1页

1.  Zhang Li. Structures of the Energy Levels of the Bound States in a Quantum Dot Quantum Well. 量子电子学报,2003,20(3):338-344 被引 3 次    
2.  An Panlong. Quantum tunneling properties and realization in low-biased well of wells structures. 量子电子学报,2011,28(5):629-634 被引 2 次    
3.  Wu Xiaowei. Pressure effect on the polarization of electronic excited state in a GaN/GaAIN quantum well. 量子电子学报,2005,22(1):75-80 被引 4 次    
4.  Zhang Hong. Binding energy of exciton in symmetrical GaAs/Al_(0.3)Ga_(0.7)As double quantum wells. 物理学报,2007,56(1):487-490 被引 6 次    
5.  Wang Li. Binding energies of impurity states in quantum wells with finite thick potential barriers. 内蒙古大学学报,2012,43(2):125-130 被引 1 次    
6.  Baskoutas S. Binding energy of hydrogenic impurity states in an inverse parabolic quantum well under static external fields. The European Physical Journal B,2009,69(2):237-244 被引 3 次    
7.  Zheng W M. Acceptor binding energy in delta-doped GaAs/AlAs multiple-quantum wells. Journal of Applied Physics,2002,92(10):6039-6042 被引 11 次    
8.  Michael Struwe. Variational Methods. 4nd Edition,2008:275 被引 1 次    
9.  Barseghyan M G. Hydrostatic pressure and electric and magnetic field effects on the binding energy of a hydrogenic donor impurity in InAs Poschl-Teller quantum ring. Superlattices and Microstructures,2012,51(1):119-127 被引 3 次    
10.  Harrison Paul. Quantum Wells, Wires and Dots. 2nd Edition,2010:97 被引 1 次    
11.  Martin G. Valence-band discontinuity between GaN and A1N measured by x-rav photoemission spectroscopy. Appl. Phys. Lett,1994,65(5):610-612 被引 6 次    
12.  Dadgax A. Metalorganic chemical vapor phase epitaxy of crack-free GaN on Si(lll) exceeding 1 μm in thickness. Jpn. J. Appl. Phys,2000,39:L1183-L1185 被引 14 次    
13.  Fay M W. Structural and electrical characterization of AuTi/AlGaN/GaN ohmic contacts. Appl Phys,2002,92(1):94-100 被引 6 次    
14.  Martin G. Valence-band discontinuities of wurtzite GaN, A1N, and InN hetero-junctions measured by x-ray photoemission spectroscopy. Appl. Phys,1996,68(18):2541-2543 被引 2 次    
15.  Brunner D. Optical constants of epitaxial AlGaN films and their temperature dependence. Appl. Phys,1997,82(10):5090-5096 被引 24 次    
16.  Lei Shuangying. Study on Intersubband Transition in Al_xGa_(1-x)N/GaN Double Quantum Wells (Al_xGa_(1-x))N/GaN双量子阱中子带间跃迁的研究．Doctorial Dissertation,2006 被引 1 次    
17.  Kasapoglu E. Binding energies of shallow donor impurities in different shaped quantum wells under an applied electric field. Physica B,2003,339:17-22 被引 9 次    
引证文献 0 篇
论文科学数据集
PlumX Metrics
相关文献

 作者相关
 关键词相关
 参考文献相关

iAuthor 链接
封松林 0000-0001-5515-2034
版权所有 ©2008 中国科学院文献情报中心 制作维护：中国科学院文献情报中心
地址：北京中关村北四环西路33号 邮政编码：100190 联系电话：(010)82627496 E-mail:cscd@mail.las.ac.cn 京ICP备05002861号-4 | 京公网安备11010802043238号