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Deposition and properties of highly c-oriented of InN films on sapphire substrates with ECR-plasma-enhanced MOCVD

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文摘 InN films with highly c-axis preferred orientation were deposited on sapphire substrate by low-temperature electron cyclotron resonance plasma-enhanced metal organic chemical vapor deposition (ECR-PEMOCVD). Trimethyl indium (TMIn) and N_2 were applied as precursors of In and N, respectively. The quality of as-grown InN films were systematically investigated as a function of TMIn fluxes by means of reflection high-energy electron diffraction (RHEED), X-ray diffraction analysis (XRD), and atomic force microscopy (AFM). The results show that the dense and uniform InN films with highly c-axis preferred orientation are successfully achieved on sapphire substrates under optimized TMIn flux of 0.8 ml min~(-1). The InN films reported here will provide various opportunities for the development of high efficiency and high-performance semiconductor devices based on InN material.
来源 Rare Metals ,2012,31(2):150-153 【核心库】
DOI 10.1007/s12598-012-0481-z
关键词 InN films ; ECR-PEMOCVD ; sapphire substrates ; semiconductor devices
地址

1. School of Physics and Optoelectronic Technology, Dalian University of Technology, Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian, 116024  

2. New Energy Source Research Center, Shenyang Institute of Engineering, Shenyang, 110136  

3. Department of Physics, Shenyang Institute of Engineering, Shenyang, 110136  

4. School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian, 116024

语种 英文
文献类型 研究性论文
ISSN 1001-0521
学科 一般工业技术
基金 国家自然科学基金 ;  the Fundamental Research Funds for the Central Universities ;  the Science and Technology Foundation for Higher Education of Liaoning Province, China and Science and Technology Innovation Project Foundation for Higher Education School
文献收藏号 CSCD:4493794

参考文献 共 19 共1页

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