氧化层厚度对NPN双极管辐射损伤的影响
Effect of oxides thickness on radiation damage to NPN bipolar transistors
查看参考文献14篇
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文摘
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研究了不同氧化层厚度的两种国产NPN双极晶体管在高低剂量率下的辐射效应和退火特性。结果显示,随总剂量的增加,晶体管基极电流增大,电流增益下降,且薄氧化层的晶体管比常规厚氧化层的晶体管退化更严重。另外,两种NPN晶体管均表现出明显的低剂量率损伤增强效应。本文对各种实验现象的损伤机理进行了分析。 |
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其他语种文摘
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Radiation damage,caused by high or low dose rate irradiation,to NPN transistors of different oxide thicknesses is investigated experimentally.The results show that base current of the transistors increased with total dose,but the current gain decreased with increasing total dose.The NPN transistors of thin oxides degraded more than those of ordinary oxide thickness.However,both types of the NPN transistors exhibited the enhanced low dose rate sensitivity(ELDRS).Mechanisms of the effects are discussed. |
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来源
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核技术
,2012,35(2):104-108 【核心库】
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关键词
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NPN双极晶体管
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~(60)Coγ辐照
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氧化层厚度
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剂量率效应
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地址
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1.
中国科学院新疆理化技术研究所, 新疆电子信息材料与器件重点实验室, 乌鲁木齐, 830011
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模拟集成电路国家重点实验室, 模拟集成电路国家重点实验室, 重庆, 400060
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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0253-3219 |
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学科
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电子技术、通信技术 |
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基金
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国家自然科学基金项目
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文献收藏号
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CSCD:4458392
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参考文献 共
14
共1页
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1.
Graves R J. Modeling low-dose-rate effect in irradiated bipolar-base oxides.
IEEE Trans Nucl Sci,1998,45:2352-2360
|
被引
22
次
|
|
|
|
|
2.
Witczak S C. Space charge limited degradation of bipolar oxides at low electric fields.
IEEE Trans Nucl Sci,1998,45:2339-2351
|
被引
26
次
|
|
|
|
|
3.
Fleetwood D M. Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates.
IEEE Trans Nucl Sci,1994,41:1871-1883
|
被引
59
次
|
|
|
|
|
4.
陆妩. 双极晶体管不同剂量率的辐射效应和退火特性.
核技术,2005,28(12):925-928
|
被引
11
次
|
|
|
|
|
5.
Rashkeev S N. Physical model for enhanced interface-trap formation at low dose rates.
IEEE Trans Nucl Sci,2002,49:2650-2655
|
被引
68
次
|
|
|
|
|
6.
Schmidt D M. Comparison of ionizing radiation induced gain degradation in lateral, substrate, and vertical PNP BJTs.
IEEE Trans Nucl Sci,1995,42:1541-1549
|
被引
15
次
|
|
|
|
|
7.
Pease R L. A proposed hardness assurance test methodology for bipolar linear circuits and devices in a space ionizing radiation environment.
IEEE Trans Nucl Sci,1997,44:1981-1988
|
被引
5
次
|
|
|
|
|
8.
Witczak S C. Hardness assurance testing of bipolar junction transistors at elevated irradiation temperatures.
IEEE Trans Nucl Sci,1998,44:1989-2000
|
被引
26
次
|
|
|
|
|
9.
陆妩. 双极运算放大器ELDRS效应的变温加速辐照方法研究.
原子能科学技术,2009,43(9):699-775
|
被引
1
次
|
|
|
|
|
10.
郑玉展. 不同发射极面积NPN双极晶体管高低剂量率辐射损伤特性.
物理学报,2009,58(8):5560-5565
|
被引
3
次
|
|
|
|
|
11.
席善斌. 不同基区掺杂浓度NPN双极晶体管电离辐照效应.
原子能科学技术,2010,44(Suppl):533-537
|
被引
2
次
|
|
|
|
|
12.
Pershenkov V S. The effect of emitter junction bias on the low dose rate radiation response of bipolar devices.
IEEE Trans Nucl Sci,1997,44(6):1840-1848
|
被引
37
次
|
|
|
|
|
13.
Boesch H E. Hole transport and trapping in field oxides.
IEEE Trans Nucl Sci,1985,32:3940-394
|
被引
3
次
|
|
|
|
|
14.
赖祖武.
抗辐射电子学,1998
|
被引
7
次
|
|
|
|
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