射频磁控溅射功率对氧化钒薄膜相变特性的影响
Effects of Sputtering Power on Phase Transition of Vanadium Oxide Thin Film by Radio Frequency Magnetron Sputtering
查看参考文献15篇
文摘
|
采用射频磁控溅射方法, 结合氮气氛退火处理工艺制备二氧化钒薄膜, 研究溅射功率对氧化钒薄膜电阻温度性能的影响.利用X射线衍射仪和X射线光电子能谱仪对薄膜的结晶结构和成分进行了分析, 利用四探针测试仪测试了样品的电阻温度特性.实验结果表明, 在保持优化氧分压和热处理工艺条件不变的情况下, 氧化钒薄膜的方块电阻随溅射功率的升高逐渐下降; 经450, ℃热处理后, 氧化钒薄膜出现了明显的半导体-金属相变特性, 相变的幅度随溅射功率的增加而逐渐下降; 在溅射功率为150, W时, 获得了相变幅度接近3个数量级的高性能二氧化钒薄膜。 |
其他语种文摘
|
Vanadium dioxide thin films were fabricated by RF magnetron sputtering and annealing in nitrogen.The effects of sputtering power on resistance-temperature property were investigated.X-ray diffraction(XRD)and X-ray photoelectron spectroscopy(XPS)were employed to study and analyze the structure of crystalline units and the phase composition of the thin films. The resistance-temperature property was also measured by using of four point probe technology. The results show that the sheet-resistance of vanadium oxide thin films decreased as the sputtering power increased if the oxygen partial pressure and annealing technology kept constant; after annealing at 450℃, the vanadium oxide thin film showed obvious semiconductor-metal phase transition, and the order of magnitude of phase transition decreased as the sputtering power increased; the magnitude of phase transition was close to 3 when the sputtering power was 150 W. |
来源
|
天津大学学报
,2011,44(10):847-851 【核心库】
|
关键词
|
二氧化钒
;
溅射功率
;
相变
;
磁控溅射
;
薄膜
|
地址
|
1.
天津大学电子信息工程学院, 集成光电子学国家重点实验室, 天津, 300072
2.
天津大学电子信息工程学院, 天津, 300072
3.
中国科学院半导体研究所, 集成光电子学国家重点实验室, 北京, 100083
|
语种
|
中文 |
文献类型
|
研究性论文 |
ISSN
|
0493-2137 |
学科
|
物理学 |
基金
|
国家863计划
;
天津市自然科学基金重点项目
;
集成光电子学国家重点实验室基金资助项目
;
国家教育部高等学校博士学科点专项科研基金
|
文献收藏号
|
CSCD:4340990
|
参考文献 共
15
共1页
|
1.
Morin F J. Oxides which show a metal-to-insulator transition at the neel temperature.
Phys Rev Lett,1959,3(1):34-36
|
被引
195
次
|
|
|
|
2.
Chain E E. Optical properties of vanadium dioxide and vanadium pentoxide thin films.
Appl Opt,1991,30(19):2782-2787
|
被引
21
次
|
|
|
|
3.
Lee J S. Microspectroscopic detection of local conducting areas generated by electricpulse-induced phase transition in VO2 films.
Applied Physics Letters,2007,91(13):133509
|
被引
20
次
|
|
|
|
4.
Lysenko S. Light-induced ultrafast phase transitions in VO2 thin film.
Applied Surface Science,2006,252(15):5512-5515
|
被引
23
次
|
|
|
|
5.
陈长虹. 基于VO_2薄膜非致冷红外探测器性能研究.
红外与毫米波学报,2001,20(2):136-138
|
被引
13
次
|
|
|
|
6.
Jiang L J. Design, fabrication and testing of a micromachined thermo-optical light modulator based on a vanadium dioxide array.
Journal of Micromechanics and Microengineering,2004,14(7):833-840
|
被引
7
次
|
|
|
|
7.
Tsai K Y. Optical switching properties of VO2 films driven by using WDM-aligned lasers.
Materials Chemistry and Physics,2006,96(2/3):331-336
|
被引
3
次
|
|
|
|
8.
John Rozen. Twodimensional current percolation in nanocrystalline vanadium dioxide films.
Applied Physics Letters,2006,88(8):081902
|
被引
15
次
|
|
|
|
9.
Vernardou D. situ FTIR studies of the growth of vanadium dioxide coatings on glass by atmospheric pressure chemical vapour deposition for VCl4 and H2O system.
Thin Solid Films,2007,515(24):8768-8770
|
被引
5
次
|
|
|
|
10.
Miyazaki H. Effect of buffer layer on VOx film fabrication by reactive RF sputtering.
Applied Surface Science,2006,252(23):8367-8370
|
被引
6
次
|
|
|
|
11.
Shigeasto Y. The structural characteristics of VOx films prepared by Heintroduced reactive RF unbalanced magnetron sputtering.
Thin Solid Films,1996,281/282(1/2):436-440
|
被引
1
次
|
|
|
|
12.
梁继然. 纳米二氧化钒薄膜的制备及红外光学性能.
物理化学学报,2009,25(8):1523-1529
|
被引
15
次
|
|
|
|
13.
Balu R. Near-zero IR transmission in the metal-insulator transition of VO2 thin films.
Applied Physics Letters,2008,92(2):021904
|
被引
9
次
|
|
|
|
14.
Jang W L. Effect of O2concentration on metal-insulator transition properties of vanadium oxide thin films prepared by radio frequency magnetron sputtering.
Thin Solid Films,2007,515(20/21):7740-7743
|
被引
3
次
|
|
|
|
15.
Alov N. XPS study of vanadium surface oxidation by oxygen ion bombardment.
Surface Science,2006,600(8):1628-1631
|
被引
13
次
|
|
|
|
|