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射频磁控溅射功率对氧化钒薄膜相变特性的影响
Effects of Sputtering Power on Phase Transition of Vanadium Oxide Thin Film by Radio Frequency Magnetron Sputtering

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梁继然 1   胡明 2   梁秀琴 3   阚强 3   陈涛 2   陈弘达 3  
文摘 采用射频磁控溅射方法, 结合氮气氛退火处理工艺制备二氧化钒薄膜, 研究溅射功率对氧化钒薄膜电阻温度性能的影响.利用X射线衍射仪和X射线光电子能谱仪对薄膜的结晶结构和成分进行了分析, 利用四探针测试仪测试了样品的电阻温度特性.实验结果表明, 在保持优化氧分压和热处理工艺条件不变的情况下, 氧化钒薄膜的方块电阻随溅射功率的升高逐渐下降; 经450, ℃热处理后, 氧化钒薄膜出现了明显的半导体-金属相变特性, 相变的幅度随溅射功率的增加而逐渐下降; 在溅射功率为150, W时, 获得了相变幅度接近3个数量级的高性能二氧化钒薄膜。
其他语种文摘 Vanadium dioxide thin films were fabricated by RF magnetron sputtering and annealing in nitrogen.The effects of sputtering power on resistance-temperature property were investigated.X-ray diffraction(XRD)and X-ray photoelectron spectroscopy(XPS)were employed to study and analyze the structure of crystalline units and the phase composition of the thin films. The resistance-temperature property was also measured by using of four point probe technology. The results show that the sheet-resistance of vanadium oxide thin films decreased as the sputtering power increased if the oxygen partial pressure and annealing technology kept constant; after annealing at 450℃, the vanadium oxide thin film showed obvious semiconductor-metal phase transition, and the order of magnitude of phase transition decreased as the sputtering power increased; the magnitude of phase transition was close to 3 when the sputtering power was 150 W.
来源 天津大学学报 ,2011,44(10):847-851 【核心库】
关键词 二氧化钒 ; 溅射功率 ; 相变 ; 磁控溅射 ; 薄膜
地址

1. 天津大学电子信息工程学院, 集成光电子学国家重点实验室, 天津, 300072  

2. 天津大学电子信息工程学院, 天津, 300072  

3. 中国科学院半导体研究所, 集成光电子学国家重点实验室, 北京, 100083

语种 中文
文献类型 研究性论文
ISSN 0493-2137
学科 物理学
基金 国家863计划 ;  天津市自然科学基金重点项目 ;  集成光电子学国家重点实验室基金资助项目 ;  国家教育部高等学校博士学科点专项科研基金
文献收藏号 CSCD:4340990

参考文献 共 15 共1页

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引证文献 3

1 夏国宏 磁控溅射氧化钒薄膜的研究进展 中国陶瓷,2012,48(7):7-9,26
被引 4

2 杜姗 氧氩流量比对溅射氧化钒薄膜结构和光学性能的影响 表面技术,2013,42(4):24-27
被引 2

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