晶粒尺寸对氧化钒薄膜电学与光学相变特性的影响
Effects of Grain Size on Resistance and Transmittance Transition of Vanadium Oxide Thin Film
查看参考文献13篇
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文摘
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采用直流对靶磁控溅射方法制备氧化钒薄膜,通过改变热处理温度获得了具有不同晶粒尺寸的相变特性氧化钒薄膜,对氧化钒薄膜相变过程中电阻和红外光透射率随温度的突变性能进行研究。结果表明:经300℃和360℃热处理后,薄膜内二氧化钒原子分数达到40%,氧化钒薄膜具有绝缘体-金属相变特性,薄膜的晶粒尺寸分别为50nm和100nm;经360℃热处理后,氧化钒薄膜表面变得致密,晶粒之间出现了联并;电学和光学相变特性的表征结果表明,电学与光学相变温度随晶粒尺寸的增加而减小;电学相变持续的温度宽度为30℃,而光学相变持续的温度宽度仅为8℃,相变持续的温度宽度保持不变。 |
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其他语种文摘
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Vanadium oxide thin films were deposited by reactive direct current facing targets magnetron sputtering,and then annealed in oxygen ambience under different temperature to fabricate phase transition vanadium dioxide thin films with different grain size.The transformation of resistance and transmittance of vanadium oxide thin films were measured across phase transition.The results show that the proportion of VO2 in film is about 40%(atom fraction)after annealed in 300℃ and 360℃,the films have insulator-metal phase transition properties.The grain size is 50nm and 100nm,respectively.After annealing at 360℃,the surface of vanadium oxide thin film becomes compact and some grain comes to merge.Electrical and optical transition properties across phase transition show that the transition temperature decreases as grain size increasing,however,the temperature width of phase transition keep constant.The temperature width of phase transition obtained from electrical transition properties is about 30℃,but that from optical transition properties is only 8℃. |
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来源
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材料工程
,2011(4):58-62,74 【核心库】
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关键词
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氧化钒薄膜
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晶粒尺寸
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光学相变
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地址
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1.
天津大学电子信息工程学院, 天津, 300072
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中国科学院半导体研究所, 集成光电子学国家重点实验室, 北京, 100083
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中国科学院半导体研究所, 中国科学院半导体集成技术工程研究中心, 北京, 100083
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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1001-4381 |
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学科
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物理学;化学;一般工业技术 |
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基金
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国家863计划
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国家教育部高等学校博士学科点专项科研基金新教师基金
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集成光电子学国家重点实验室课题资助项目
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文献收藏号
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CSCD:4288599
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参考文献 共
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