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双纳米硅p层优化非晶硅太阳能电池
Optimization of Double Nanocrystalline Silicon p-layers for Amorphous Silicon Solar Cells

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文摘 采用等离子体增强化学气相沉积(Plasma Enhanced Chemical Vapor Deposition,PECVD)技术在高功率密度、高反应气压和低衬底温度下制备出不同氢稀释比RH的硅薄膜。高分辨透射电镜(High-Resolution Transmission ElectronMicroscopy,HRTEM)图像与拉曼谱显示在较高氢稀释比条件下生长的薄膜为纳米硅(nanocrystalline silicon,nc-Si)薄膜,纳米硅颗粒尺寸约为3~5nm。对不同氢稀释比下纳米硅薄膜光学带隙的变化趋势进行了研究。结果表明:随着氢稀释比的增加,纳米硅薄膜的光学带隙逐渐增加。提出采用双纳米硅p层结构改善非晶硅太阳能电池,发现双纳米硅p层电池效率比单纳米硅p层的电池效率提高了17%。
其他语种文摘 The plasma enhanced chemical vapor deposition(PECVD)system was used for fabricating the silicon films with different hydrogen dilution ratio(RH)under the high power density,high pressure and low substrate temperature.High-resolution transmission electron microscopy(HRTEM)and Raman spectroscopy indicated that the thin films were nanocrystalline silicon(nc-Si)films which contained nanocrystallites with grain size around 3-5nm.The effects of the RH on the optical band gaps of the nc-Si thin films were studied.The results showed that the optical band gaps of the nc-Si thin films increased with the increased in the RH.An double nc-Si p-layers structure was developed to improve the i/p interface in hydrogenated amorphous silicon(a-Si∶H)solar cells.The efficiency of the double nc-Si p-layers cell was improved by 17% compared its counterpart of the single nc-Si p-layer cell
来源 材料工程 ,2011(8):5-7,13 【核心库】
关键词 纳米硅 ; 氢稀释比 ; 光学带隙
地址

中国科学院半导体研究所, 中国科学院材料科学重点实验室, 北京, 100083

语种 中文
文献类型 研究性论文
ISSN 1001-4381
学科 能源与动力工程
基金 国家973计划 ;  国家自然科学基金资助项目 ;  中国科学院知识创新工程重要方向项目
文献收藏号 CSCD:4281889

参考文献 共 9 共1页

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引证文献 2

1 于威 氢稀释对纳米晶硅薄膜晶化特性的影响及薄膜生长机理 光子学报,2012,41(8):927-931
被引 2

2 肖治垣 变体飞艇太阳能电池阵列工作特性的影响因素 材料工程,2013(7):24-28,34
被引 1

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