周期换向脉冲电沉积-硒化法制备铜铟镓硒薄膜
Formation of CuInxGa1-xSe2 Films by Pulse-reverse Electrodeposition Technique
查看参考文献22篇
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文摘
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采用周期换向脉冲电沉积法于Mo/玻璃及ITO/玻璃衬底上制备铜铟镓硒薄膜。Mo/玻璃或ITO/玻璃为工作电极,饱和甘汞(SCE)为参比电极,大面积铂片作为阳极构成三电极体系,以氯化铜,三氯化铟,三氯化镓和亚硒酸的水溶液为电解液,制备Cu-In-Ga-Se合金预制膜,随后在硒蒸气中进行硒化处理,得到了黄铜矿结构的CuInGaSe2(CIGS)薄膜.分别用SEM,XRD和UV-吸收分析了合金预制膜和CuInGaSe2薄膜的表面形貌、相组成及紫外-可见吸收特性。结果表明,周期换向脉冲电沉积法可以制备表面平整、均匀致密的Cu-In-Ga-Se合金薄膜;利用脉冲电压的占空比可以提高预制膜中的In元素的比例,且随着In含量的增加,CIGS薄膜的结晶性变好;适当延长硒化退火的时间,可以使薄膜晶粒大小均匀,减小内应力,使薄膜的光吸收率提高,以利于制备更高效率的CIGS薄膜太阳电池. |
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其他语种文摘
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CuInxGa1-xSe2 polycrystalline thin films were synthesized on molybdenum substrate by the pulse-reverse electrodeposition technique in this study.CuInxGa1-xSe2 films were electrodeposited from aqueous solution,containing CuCl2,InCl3,GaCl3,H2SeO2,Na-citric,and LiCl,on Mo/Glass substrate under pulse potentials with different amplitude and duration time.The electrodeposited films were characterized by X-ray diffractometer(XRD),scanning electron microscopy(SEM) and energy dispersive X-ray analysis(EDS).The results revealed that thin films fabricated by the pulse-reverse electrodeposition technique can fabricate a chalcopyrite structure,with dense and smooth morphological features;the proportion of metal ion In3+ and crystallizability increase along with the increase of the reverse potential,and the films become stack and homogenous.Extending the annealed time of the CuInxGa1-xSe2 precursor is beneficial to get homogeneous films with higher light absorption as the absorber layer for solar cells. |
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来源
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功能材料与器件学报
,2011,17(2):187-194 【扩展库】
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关键词
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周期换向脉冲
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电沉积
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CIGS薄膜
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太阳电池
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地址
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中国科学院半导体研究所, 北京, 100083
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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1007-4252 |
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学科
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化学 |
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基金
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国家973计划
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国家自然科学基金
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文献收藏号
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CSCD:4196446
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