Ⅱ-Ⅵ族镉化物材料的MBE生长及器件应用进展
Device Applications and MBE Growth of Ⅱ-ⅥCd-based Compound Materials
查看参考文献26篇
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文摘
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Ⅱ-Ⅵ族镉(Cd)化物,如CdTe、CdSe、CdSeTe等具有直接带隙、光学吸收系数高和电学特性优异等突出特点,在太阳电池、X及γ射线探测器、红外焦平面阵列(FPA)等方面均得到了广泛应用. 文章简要综述了近年来用分子束外延(MBE)工艺生长镉化物微结构材料的研究进展和器件应用动态,并对镉化物在光电子领域中的发展前景进行了展望 |
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其他语种文摘
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Ⅱ-ⅥCd-based compounds with the characteristics of direct band gap, high optical absorption coefficient, and excellent electrical properties, have been extensively used in solar cells, X-andγ-ray detectors, infrared focal plane arrays (FPAs), etc. In this paper, progresses in molecular-beam-epitaxy (MBE) growth and device applications of Cd-based compounds are briefly reviewed. And their prospects in the field of optoelectronics are also predicted |
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来源
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半导体光电
,2011,32(1):1-5,14 【扩展库】
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关键词
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Ⅱ-Ⅵ族镉化物
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分子束外延
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太阳电池
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X射线探测器
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红外焦平面阵列
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地址
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中国科学院半导体研究所材料科学中心, 北京, 100083
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语种
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中文 |
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文献类型
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综述型 |
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ISSN
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1001-5868 |
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学科
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物理学 |
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基金
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国家自然科学基金资助项目
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文献收藏号
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CSCD:4154826
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参考文献 共
26
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