不同偏置条件下NPN双极晶体管的电离辐照效应
Radiation Response of NPN Bipolar Transistors at Various Emitter Junction Biases
查看参考文献8篇
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文摘
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对NPN双极晶体管进行了不同剂量率,不同偏置条件下的电离辐射实验.研究结果表明:同一剂量率辐照时,无论是低剂量率还是高剂量率,辐照损伤均是基-射结反向偏置时最大,零偏置次之,正偏置最小.NPN双极晶体管在3种偏置下均可观察到明显的低剂量率辐照损伤增强(ELDRS)效应,且偏置条件对ELDRS效应很明显,表现为基-射结正向偏置ELDRS效应最为显著,零偏次之,反向偏置最次.对出现这一实验结果的机理进行了探讨 |
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其他语种文摘
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At various dose rates, ionizing radiation response of NPN bipolar transistors at three kinds of base-emitter junction biases was investigated. The results show that the radiation damages are most significant at base-emitter junction reverse bias and minimal at forward bias when irradiated at high or low dose rate. Furthermore, the radiation damage is more severe at low dose rate for the same bias,i.e.enhanced low dose rate sensitivity(ELDRS).The influence of base-emitter junction bias on ELDRS effect is obvious. The ELDRS effect is most significant for base-emitter junction forward bias, while it is least for reverse bias. The mechanisms of these results were discussed |
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来源
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原子能科学技术
,2011,45(2):217-222 【核心库】
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关键词
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NPN双极晶体管
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60Coγ辐照
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偏置
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低剂量率辐照损伤增强
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地址
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1.
中国科学院新疆理化技术研究所, 新疆电子信息材料与器件重点实验室, 新疆, 乌鲁木齐, 830011
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模拟集成电路国家重点实验室（重庆）, 模拟集成电路国家重点实验室, 重庆, 400060
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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1000-6931 |
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学科
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电子技术、通信技术 |
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基金
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模拟集成电路国家重点实验室基金
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文献收藏号
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CSCD:4153962
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参考文献 共
8
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