246nm p-i-n型背照AlGaN太阳盲紫外探测器的研制
Fabrication of 246 nm back-illuminated AlGaN solar-blind ultraviolet p-i-n photodetector
查看参考文献10篇
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文摘
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设计并制备出短波长p-i-n型背照AlGaN太阳盲紫外探测器,响应波段为225~255 nm,峰值波长为246nm.材料为在蓝宝石衬底上生长的背照式p-i-n型异质结结构,n型窗口层的AlxGa1-xN中的Al组分为71%,非故意掺杂吸收层中的Al组分为52%.零偏压下测得的暗电流为27 pA,光电流为2.7 nA,峰值响应度为23 mA/W.并在此基础上制备出大面阵太阳盲紫外探测器芯片,其像元数为128×128,光敏元直径为44μm,像元间距为50μm |
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其他语种文摘
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A short wavelength back-illuminated AlGaN solar-blind ultraviolet p-i-n photodetector was designed and fabricated. It was photosensitive in the waveband 225-255 nm, and the peak wavelength was 246 nm. A back-illuminated p-i-n heterojunction structure was grown on transparent sapphire substrate using MOCVD, the AlxGa1-xN alloy composition of the n-type window layer was 71%, and the alloy composition of the unintentionally doped(UID) absorber layer was 52%.The dark current measured at zero bias was 27 pA, and the photocurrent was 2.7 nA, while the peak responsivity was 23 mA/W.A 128×128 pixels solar blind ultraviolet photodetector array was fabricated on this basis. The diameter of each pixel was 44 μm with a 50 μm pitch |
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来源
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红外与激光工程
,2011,40(1):32-35 【核心库】
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关键词
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AlGaN
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太阳盲
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紫外探测器
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面阵
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地址
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1.
中国科学院半导体研究所, 中国科学院纳米光电子实验室, 北京, 100083
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中国科学院半导体研究所, 集成光电子国家重点实验室, 北京, 100083
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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1007-2276 |
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学科
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电子技术、通信技术 |
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基金
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国家自然科学基金资助项目
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国家863计划
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文献收藏号
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CSCD:4142236
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参考文献 共
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