含有p-GaN纳米阵列的InGaN/GaN双异质结太阳能电池的制作
Fabrication of InGaN/GaN double heterojunction solar cells with p-GaN nanorod arrays
查看参考文献13篇
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文摘
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提出了一种提高p-GaN/i-InGaN/n-GaN双异质结太阳能电池外量子效率的方法,即将p-GaN刻蚀成纳米阵列结构.我们使用Ni退火形成微结构掩模,通过感应耦合等离子体(ICP)将p-GaN刻蚀纳米阵列结构.同时,提出了两步刻蚀n-GaN台面的制作工艺,以此在形成p-GaN纳米阵列结构时获得光滑的n-GaN层表面,以此改善后续金属电极的沉积.经测试,含有p-GaN纳米阵列结构的电池峰值外量子效率可达55%,比常规p-GaN膜层基InGaN/GaN太阳能电池的外量子效率提高了10% |
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其他语种文摘
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A method with p-GaN nanorod arrays is proposed to enhance the external quantum efficiency (EQE) of p-GaN/i-In-GaN/n-GaN double heterojunctional solar cells. Inductively coupled plasma ethcing is utilized to form the p-GaN nanorod arrays with self-assembled Ni cluster as the etching mask. To form a smooth n-GaN surface for subsequent metal deposition, we demonstrate two-step etching of n-GaN mesa. The peak EQE of solar cells with p-GaN nanorod arrays reaches 55%, which shows an enhancement of 10% as compared with the conventional device with p-GaN film |
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来源
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科学通报
,2011,56(2):174-178 【核心库】
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关键词
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纳米阵列结构
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InGaN/GaN双异质结
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太阳能电池
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外量子效率
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地址
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1.
中国科学院苏州纳米技术与纳米仿生研究所, 苏州, 215125
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中国科学院半导体研究所, 北京, 100083
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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0023-074X |
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学科
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社会科学总论 |
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基金
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国家973计划
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苏州高效太阳能电池技术重点实验室
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文献收藏号
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CSCD:4125115
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13
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