铝诱导结晶法制备高度(111)择优取向多晶硅薄膜及成核分析
查看参考文献21篇
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文摘
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采用铝诱导结晶法在玻璃衬底上制备了具有高度(111)择优取向的多晶硅薄膜.首先通过磁控溅射在玻璃衬底上先后沉积铝层和非晶硅层,然后在480℃下退火1h以完成铝诱导结晶.退火后硅层与铝层发生置换,形成了具有高度(111)择优取向以及良好结晶质量的多晶硅层.通过对Al2O3氧化膜结构变化及晶格匹配进行分析,阐明了铝诱导结晶过程中(111)择优取向的铝层间接促使多晶硅(111)择优取向成核的作用机制 |
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来源
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中国科学. 技术科学
,2010,40(11):1378-1382 【核心库】
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DOI
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10.1360/ze2010-40-11-1378
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关键词
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多晶硅薄膜
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铝诱导结晶
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(111)择优取向
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地址
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1.
中国科学院半导体研究所,半导体材料科学重点实验室, 中国科学院半导体研究所,半导体材料科学重点实验室, 北京, 100083
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华北电力大学(北京)可再生能源学院, 硅材料国家重点实验室, 北京, 102206
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华北电力大学(北京)可再生能源学院, 北京, 102206
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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1674-7259 |
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学科
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一般工业技术 |
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基金
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国家973计划
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北京市自然科学基金
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浙江大学硅材料国家重点实验室访问学者基金
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文献收藏号
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CSCD:4109203
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参考文献 共
21
共2页
|
|
1.
Green M A. Thin-film solar cells: Review of materials, technologies and commercial status.
J Mater Sci: Mater Electron,2007,18:15-19
|
被引
4
次
|
|
|
|
|
2.
Aberle A G. Progress with polycrystalline silicon thin-film solar cells on glass at UNSW.
J Crystal Growth,2006,287:386-390
|
被引
6
次
|
|
|
|
|
3.
Gall S. Large-grained polycrystalline silicon on glass for thin-film solar cells.
Thin Solid Films,2006,511/512:7-14
|
被引
2
次
|
|
|
|
|
4.
Fortunato G. Polycrystalline silicon thin-film transistors: A continuous evolving technology.
Thin Solid Films,1997,296:82-90
|
被引
5
次
|
|
|
|
|
5.
Bergmann R B. Solid-phase crystallized Si films on glass substrates for thin film solar cells.
Solar Energy Mater Solar Cells,1997,46:147-155
|
被引
9
次
|
|
|
|
|
6.
Sposili R S. Sequential lateral solidification of thin silicon films on SiO2.
Appl Phys Lett,1996,69:2864-2866
|
被引
11
次
|
|
|
|
|
7.
Knaepen W. In-situ X-ray diffraction study of metal induced crystallization of amorphous silicon.
Thin Solid Films,2008,516:4946-4952
|
被引
10
次
|
|
|
|
|
8.
Nast O. Aluminum-induced crystallization of amorphous silicon on glass substrates above and below the eutectic temperature.
Appl Phys Lett,1998,73:3214-3216
|
被引
13
次
|
|
|
|
|
9.
Gall S. Aluminum-induced crystallization of amorphous silicon.
J Non-Cryst Solids,2002,299/302:741-745
|
被引
9
次
|
|
|
|
|
10.
Kurosawa M. Orientation controlled Si thin films on insulating substrates by Al induced crystallization combined with interfacial oxide layer modulation.
Appl Phys Lett,2009,95:132103
|
被引
2
次
|
|
|
|
|
11.
王泽温. 基于铝诱导结晶的多晶硅薄膜材料结构优化.
中国科学E辑:技术科学,2009,39:1054-1057
|
被引
2
次
|
|
|
|
|
12.
Schneider J. Aluminum-induced crystallization of amorphous silicon: Preparation effect on growth kinetics.
J Non-Cryst Solids,2004,338/340:127-130
|
被引
5
次
|
|
|
|
|
13.
Van Gestel D. Intragrain defects in polycrystalline silicon layers growth by aluminum-induced crystallization and epitaxy for thin-film solar cells.
J Appl Phys,2009,105:114507
|
被引
1
次
|
|
|
|
|
14.
Schneider J. Aluminum-induced crystallization: Nucleation and growth process.
J Non-Cryst Solids,2006,352:972-975
|
被引
12
次
|
|
|
|
|
15.
Schneider J. A simple model explaining the preferential(100)orientation of silicon thin films made by aluminum-induced layer exchange.
J Cryst Growth,2006,287:423-427
|
被引
4
次
|
|
|
|
|
16.
Sarikov A. A model of preferential(100)crystal orientation of Si grains grown by aluminum induced layer exchange process.
Thin Solid Films,2007,515:7465-7468
|
被引
3
次
|
|
|
|
|
17.
Nast O. Influence of interface and Al structure on layer exchange during aluminum-induced crystallization of amorphous silicon.
J Appl Phys,2000,88:716-724
|
被引
11
次
|
|
|
|
|
18.
Sieber I. Preparation of thin polycrystalline silicon films on glass by aluminum-induced crystallization--An electron microscopy study.
Thin Solid Films,2003,427:298-302
|
被引
3
次
|
|
|
|
|
19.
Nast O. Elucidation of the layer exchange mechanism in the formation of polycrystalline silicon by aluminum-induced crystallization.
J Appl Phys,2000,88:124-132
|
被引
25
次
|
|
|
|
|
20.
Sawada K. Metalorganic molecular-beam epitaxy of gamma-Al2O3 films on Si at low growth temperatures.
Appl Phys Lett,1988,52:1672-1674
|
被引
4
次
|
|
|
|
|
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