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8通道-1.6nm Si纳米线阵列波导光栅的设计与制作
Design and fabrication of an 8-channel and 1.6 nm arr ayed waveguide grating based on Si nanowires
查看参考文献7篇
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文摘
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设计了基于绝缘层上硅(SOI)材料的8通道Si纳米线阵列波导光栅(AWG),器件的通道间隔为1.6nm,面积为420μm×130μm.利用传输函数法模拟了器件传输谱,结果表明,器件的通道间隔为1.6nm,通道间串扰为17dB.给出了结合电子束光刻(EBL)和感应耦合等离子(ICP)刻蚀技术制备器件的详细流程.光谱测试结果分析表明,器件通道间隔为1.3~1.6nm,通道串扰为3dB,中心通道损耗为11.6dB |
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其他语种文摘
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An ultrasmall 8-channel arrayed waveguide grating (AWG) demultiplexer based on Si nanowire waveguide is designed. The demultiplexer channel spacing is 1.6 nm and its effective area is 420 μm×130 μm.The transimission spectra are simulated by the transimission function method and the results show that the device is with a channel spacing of 1.6 nm and crosstalk of 17 dB.The entire fabrication procedure is given by combining electron beam lithography (EBL) and inductively coupled plasma (ICP) etching technology. The demultiplexing characteristics are observed by a spectrometer and the analytic results show that the channel spacing is from 1.3 nm to 1.6 nm, the crosstalk is 3 dB and the central channel loss is 11.6 dB |
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来源
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光电子·激光
,2010,21(11):1589-1592 【核心库】
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关键词
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阵列波导光栅(AWG)
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Si纳米线波导
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电子束光刻(EBL)
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感应耦合等离子(ICP)刻蚀
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地址
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中国科学院半导体研究所, 集成光电子国家重点实验室, 北京, 100083
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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1005-0086 |
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学科
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电子技术、通信技术 |
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基金
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国家自然科学基金资助项目
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国家863计划
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文献收藏号
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CSCD:4050504
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参考文献 共
7
共1页
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1.
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被引
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被引
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3.
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被引
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5.
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被引
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7.
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