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AlGaN/GaN HEMT中电场分布的ATLAS模拟
ATLAS Simulation on Electrical Field Distribution of AlGaN/GaN HEMT

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张明兰 1   王晓亮 2   杨瑞霞 1   胡国新 2  
文摘 用Silvaco的ATLAS软件模拟了栅场板参数对AlGaN/GaN HEMT中电场分布的影响. 模拟结果表明,场板的加入改变了器件中电势的分布情况,降低了栅边缘处的电场峰值,改善了器件的击穿特性;场板长度(L_(FP), length of field plate)、场板与势垒层间的介质层厚度t等对电场的分布影响很大. 随着L_(FP)的增大、t的减小,栅边缘处的电场峰值E_(peak1)明显下降,对提高器件的耐压非常有利. 通过对相同器件结构处于不同漏压下的情况进行模拟,发现当器件处于高压下时,场板的分压作用更加明显,说明场板结构更适合于制备用作电力开关器件的高击穿电压 AlGaN/GaNHEMT
其他语种文摘 The electrical field distribution of AlGaN/GaN HEMT was simulated by ATLAS of Silvaco with variable parameters of gate-connected field plate (FP). Simulation results show that the potential distribution is changed, the peak of electrical field at the edge of gate close to drain side is decreased, and the breakdown characteristic is improved by the addition of FP. Field plate length (L_(FP)) and dielectric film thickness (t) between the field plate and barrier layer has a great influence on the electrical field distribution. Peak of electrical field at the edge of gate close to drain side is relaxed by lengthening L_(FP) and thinning t, which is helpful to improve breakdown voltage. Simulation results of a same device under different drain-source voltage (V_(ds)) show that the influence of field plate becomes more obviously while drain-source voltage is increased, whichmeans that field plate is the suitable structure in the fabrication of high breakdown voltage AlGaN/GaNHEMTfor power switching device
来源 半导体技术 ,2010,35(9):874-876,902 【扩展库】
关键词 AlGaN/GaN ; 场板 ; 电场峰值 ; 击穿电压 ; 模拟
地址

1. 河北工业大学信息工程学院, 天津, 300401  

2. 中国科学院半导体研究所, 北京, 100083

语种 中文
文献类型 研究性论文
ISSN 1003-353X
学科 电子技术、通信技术
基金 国家自然科学基金青年科学基金
文献收藏号 CSCD:3981892

参考文献 共 8 共1页

1.  WANG X L. MOCVD grown high mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate. J of Crystal Growth,2007,298:791-793 被引 8    
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3.  张明兰. 高击穿电压AlGaN/GaN HEMT电力开关器件研究进展. 半导体技术,2010,35(5):417-422 被引 2    
4.  ZHANG N Q. High breakdown AlGaN/GaNHEMT with overlapping gate structure. IEEE EDL,2000,21(9):421-423 被引 19    
5.  KARMALKAR S. Enhancement of breakdown voltage inAlGaN/GaNhigh electronmobilitytransistors using a field plate. IEEETrans on ED,2001,48(8):1515-1519 被引 26    
6.  SAITO W. Suppression of dynamic on-resistance increase and gate charge measurements in high-voltage GaN-HEMTswith optimized fiele-plate structure. IEEETrans. Electron Devices,2007,54(8):1825-1830 被引 7    
7.  DORA Y. High breakdown voltage achieved on AlGaN/GaN HEMTs with integrated slant field plates. IEEE ED Lett,2006,27(9):713-715 被引 26    
8.  SAITO W. A 120 W boost converter operation using a high-volta ge GaN-HEMT. IEEE EDL,2008,29(1):8-9 被引 4    
引证文献 1

1 唐健 AIGaN/AIN/GaN HEMT结构2DEG的光致发光谱 半导体技术,2014,39(9):703-706
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