考虑速度过冲的单载流子光探测器特性
Velocity Overshoot-Aware Characteristics of Uni-Traveling-Carrier Photodiode
查看参考文献16篇
|
文摘
|
通过在器件模拟中引入考虑了速度过冲效应的水动力学模型,对单载流子光探测器 (UTC-PD)的传统漂移扩散模型进行了改进. 结果表明,电子的速度过冲有效地减小了空间电荷效应,从而提高了器件的带宽. 同时,通过对器件的直流和交流特性分析,研究了吸收层和收集层参数对器件性能的影响. |
|
其他语种文摘
|
The conventional drift-diffusion model in the depletion region of the Uni-Traveling-Carrier Photodiode(UTC-PD) is modified by introducing the hydro dynamic model, which takes into account of the velocity overshoot effect. The results show that the velocity overshoot reduces the space-charge effect efficiently, thus enhancing the bandwidth is enhanced. The DC and AC performance of the device is analyzed, based on which the influence of parameters of the absorption and collection layers on the characteristics of the device is investigated. |
|
来源
|
半导体光电
,2010,31(3):349-352 【扩展库】
|
|
关键词
|
UTC-PD
;
水动力学
;
热载流子
;
速度过冲
;
渡越时间
|
|
地址
|
1.
清华大学微电子研究所, 北京, 100084
2.
中国科学院半导体研究所, 北京, 100083
|
|
语种
|
中文 |
|
文献类型
|
研究性论文 |
|
ISSN
|
1001-5868 |
|
学科
|
电子技术、通信技术 |
|
基金
|
国家自然科学基金项目
;
国家863计划
|
|
文献收藏号
|
CSCD:3919907
|
参考文献 共
16
共1页
|
|
1.
Ishibashi T. High-speed response of uni-traveling-carrier photodiodes.
Jpa. J. Appl. Phys,1997,36:6263-6268
|
被引
18
次
|
|
|
|
|
2.
Ito H. InP/InGaAs unitraveling-carrier photodiode with 220 GHz bandwidth.
Electron. Lett,1999,35(18):1556-1557
|
被引
5
次
|
|
|
|
|
3.
Ito H. High-speed and high output InP-InGaAs unitraveling-carrier photodiodes.
IEEE J. Sel. Top. in Quantum Electron,2004,10(4):709-724
|
被引
15
次
|
|
|
|
|
4.
Klamkin J. Output saturation and linearity of waveguide unitravelingcarrier photodiodes.
IEEE J. Quantum Electron,2008,44(4):354-359
|
被引
2
次
|
|
|
|
|
5.
Beling A. Measurement and modeling of a high-linearity modified uni-traveling carrier photodiode.
IEEE Photon. Technol. Lett,2008,20(14):1219-1221
|
被引
4
次
|
|
|
|
|
6.
Ito H. High-power photonic millimeter wave generation at 100 GHz using matching-circuit-integrated uni-traveling-carrier photodiodes.
IEEE Proc-Optoelecton,2003,150(2):138-142
|
被引
1
次
|
|
|
|
|
7.
Chtioui M. High-power high-linearity uni-traveling-carrier photodiodes for analog photonic links.
IEEE Photon. Technol. Lett,2008,20(3):202-204
|
被引
8
次
|
|
|
|
|
8.
Wu Y S. Dynamic analysis of high-power and high-speed near-ballistic unitraveling carrier photodiodes at W-band.
IEEE Photon. Technol. Lett,2008,20(13):1160-1162
|
被引
3
次
|
|
|
|
|
9.
Maloney T J. Transient and steady-state electron transport properties of GaAs and InP.
J. Appl. Phys,1997,48(2):781-787
|
被引
1
次
|
|
|
|
|
10.
Rahman S M M. Hydrodynamic simulaitons of unitraveling-carrier photodiodes.
IEEE J. Quantum Electron,2007,43(11):1088-1094
|
被引
2
次
|
|
|
|
|
11.
朱浩波. 单向载流子传输光电探测器模拟.
半导体学报,2006,27(11):2019-2024
|
被引
5
次
|
|
|
|
|
12.
Ishibashi T. InP/InGaAs uni-traveling-carrier photodiodes.
IEICE Trans. Electron,2000,E83-C(6):938-947
|
被引
11
次
|
|
|
|
|
13.
Banik B. Optimization of the UTC-PD epitaxy for photomixing at 340 GHz.
Int. J. Infranred Milli Waves,2008,29(10):914-923
|
被引
3
次
|
|
|
|
|
14.
Gonzalez B. An energy relaxation time model for device simulation.
Solid-State Electron,1999,43(9):1791-1795
|
被引
3
次
|
|
|
|
|
15.
Shimizu N. Electron diffusivity in p-InGaAs determined from the pulse response of InP/InGaAs uni-traveling-carrier photodiodes.
Appl. Phys. Lett,2000,76(9):1191-1193
|
被引
3
次
|
|
|
|
|
16.
Srivastava S. Numerical modeling study of the InP/InGaAs uni-traveling carrier photodiode.
Solid-State Electron,2004,48(3):461-470
|
被引
5
次
|
|
|
|
|
了解气象卫星更多信息，请访问