GaAs /AlGaAs多量子阱空间光调制器入射角度特性研究
Incident angle dependence of GaAs/AlGaAs multiple quantum well spatial light modulators
查看参考文献20篇
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文摘
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研究了GaAs/AlGaAs多量子阱(MQW)空间光调制器(SLM)在不同入射角度下的调制特性。对腔模位置与入射角度的关系进行了理论计算和实验验证, 两者具有较好的一致性。当入射角在0°~75°之间变化时, 腔模从871 nm变化至845 nm, 可调节范围达26 nm。当入射光从垂直入射变化为约45°入射时, SLM对比度从 (CR)3. 8提高到16. 3, 调制电压从9. 5 V下降至6. 5 V。理论分析和实验结果表明, 入射角度调节能够有效提高GaAs/AlGaAs MQWSLM调制性能。 |
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其他语种文摘
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The modulation performance of GaAs-AlGaAs multiple quantum well(MQW) spatial light modulators(SLMs) with varying incident angle is analyzed. When the incident angle varies from 0°to 75°. The cavitymode canbe changed from 871 nm to 845 nm. The tunable range is 26 nm. Under the 45° incident angle condition, the contrast ratio(CR)increases from3. 8 to 16. 3, and the bias voltage decreases from 9. 5 V to 6. 5 V. Both theoretical and experimental results demonstrate that modifying incident angle is an effective tuning method to improve the performance of MQW SLMs. |
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来源
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光电子·激光
,2010,21(5):668-671 【核心库】
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关键词
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空间光调制器(SLM)
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多量子阱(MQW)
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入射角度
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对比度(CR)
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地址
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1.
中国科学院半导体研究所, 北京, 100083
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中国科学院苏州纳米技术与纳米仿生研究所, 江苏, 苏州, 215125
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加拿大国家研究理事会微结构研究所, 加拿大, 渥太华, K1A0R6
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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1005-0086 |
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学科
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电子技术、通信技术 |
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基金
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科技部中美国际科技合作计划基金资助项目
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苏州市中美国际合作基金资助项目
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文献收藏号
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CSCD:3901846
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