二次退火制备I I I-V族半导体量子点
Twice Annealing to Fabricate Quantum Dots of III-V Semiconductors
查看参考文献14篇
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文摘
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利用离子注入法在一块Si (001)衬底上注入了In~+和As~+,注入能量分别为210 keV, 150 keV,注入剂量6. 2 ×1016cm~(-2), 8. 6×1016cm~(-2),另一块Si (001)衬底上注入Ga~+和Sb~+,注入能量分别为140 keV, 220 keV,注入剂量分别为8. 2×1016cm~(-2), 6. 2×1016cm~(-2),然后对样品分别经过一次退火和二次退火处理制备出了Si基量子点材料。用透射电子显微镜(TEM)和高分辨透射电子显微镜(HRTEM)观察了退火后量子点截面像,用PL探测量子点的光致发光谱,发现经二次退火生长的量子点微晶格结构和Si衬底损伤的修复均明显优于一次退火。 |
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其他语种文摘
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One silica (001) slice was implanted by In~+ and As~+ at 210 keV,150 keV,with does of 6. 2 x 10~16 cm~(-2),8. 6 x 10~16cm~(-2), and the other silica (001) slice was implanted by Ga~+ and Sb~+ at 140 keV and 220 keV with doses of 8. 2 x 10~16 cm~(-2) and 6. 2 x 10~16 cm~(-2), respectively. Then the quantum dots material was fabricated with subsequently once annealing and twice annealing treatment. The implanted subsequent annealed samples were observed using a transmission electron microscope (TEM) and a high resolution transmission electron microscope (HRTEM). The TEM images show that the crystal lattice of the dots and the repairing of the damaged substrate of the samples which experience the twice anealing are better than that of the samples which experience the once anealing. |
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来源
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人工晶体学报
,2010,39(3):747-750 【核心库】
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关键词
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二次退火
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量子点
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离子注入
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地址
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1.
武汉大学物理科学与技术学院, 武汉, 430072
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中国科学院半导体研究所, 中国科学院半导体材料科学重点实验室, 北京, 100083
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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1000-985X |
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学科
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电子技术、通信技术 |
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基金
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国家自然科学基金
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中国科学院半导体研究所半导体材料科学重点实验室开放基金资助
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文献收藏号
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CSCD:3900118
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参考文献 共
14
共1页
|
|
1.
Chatterjee A.
Appl. Phys. Lett,1990,57(1):360
|
被引
2
次
|
|
|
|
|
2.
Feng X D. Advances in Reaserch on Embeded Nanocrystal Formed by Ion Implantion.
Materials Review,2002,16:9
|
被引
2
次
|
|
|
|
|
3.
Li S S. Quantum Computing.
Pnas,2001,98(21):11847-11848
|
被引
8
次
|
|
|
|
|
4.
Xie Q H. Vertically Self Organized InAs Quantum Box Islands on GaAs (100).
Phys. Rev. Lett,1995,75(13):2542-2545
|
被引
10
次
|
|
|
|
|
5.
Drexler H. Spectroscopy of Quantum Levels in Charge Tunable InGaAs Quantum Dots.
Phys. Rev. Lett,1994,73(16):2252-2255
|
被引
11
次
|
|
|
|
|
6.
Seguin R. Size-dependent Fine-structure Splitting in Self-organized InAs/GaAs Quantum Dots.
Phys. Rev. Lett,2005,95:25740-2-25740-5
|
被引
1
次
|
|
|
|
|
7.
Dawson P. Temperature-dependent Optical Properties of InAs/ GaAs Quantum Dots: Independent Carrier Versus Exciton Relaxation.
Phys. Rev. B,2005,72(2353):1-10
|
被引
1
次
|
|
|
|
|
8.
Stomp R. Detection of Single-electron Charging in an Individual InAs Quantum Dot by Noncontact Atomic Force Microscopy.
Phys. Rev. Lett,2005,94:0568/2-0568/5
|
被引
1
次
|
|
|
|
|
9.
Trindade T. Nanocrystalline Semiconductors: Synthesis, Properties, and Perspectives.
Chem. Mater,2001,13:3843-3858
|
被引
37
次
|
|
|
|
|
10.
Zeng G. The Present Research and Development of Si_2 Based Light-emitting Materials.
Piezoelectrics & Acoustooptics,2004,26(4):1004-1014
|
被引
1
次
|
|
|
|
|
11.
.
J. Wuhan Univ. (Nat. Sci. Ed. ),2008,1:047-050
|
被引
1
次
|
|
|
|
|
12.
范伟栋. As↑＋,Si↑＋双注入GaAs瞬态退火的行为.
半导体学报,1989,10(3):230-232
|
被引
2
次
|
|
|
|
|
13.
朱德华. Si,As双注入GaAs的RTA研究.
半导体学报,1990,11(2):140-143
|
被引
3
次
|
|
|
|
|
14.
王永晨. Si↑＋,As↑＋双离子注入半绝缘GaAs的研究.
半导体学报,1995,16(9):700-705
|
被引
1
次
|
|
|
|
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