高击穿电压AlGaN/GaN HEMT电力开关器件研究进展
Development of High Breakdown Voltage AlGaN/GaN HEMT for Power Switching Device
查看参考文献36篇
文摘
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作为第三代宽禁带半导体材料的典型代表, GaN材料在各个应用领域的研究工作都受到了高度的重视。概述了基于AlGaN/GaNHEMT结构的新型高压、高频、低损耗电力开关器件的最新研究进展。从器件的结构特征入手, 详细介绍了改善器件击穿特性的途径、高频开关特性的研究情况、Si衬底上AlGaN/GaNHEMT结构材料的生长、增强型器件的制备技术和功率集成电路的研究等几个国际上的热点问题。最后, 对该项研究面临的问题及未来的发展趋势做了展望。 |
其他语种文摘
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Acting as the representative of the third generation semiconductor materials, GaN becomes the focus of research all overtheworld. The development of AlGaN/GaNHEMTwith high breakdown voltage, high frequency, and low loss is reviewed. Beginning with the introduction of the device structure, some critical problems hindering this research are discussed, including improvement of the breakdown characteristic, advantage in high frequency performance, growth of AlGaN/GaN heterostructures on Si substrate, fabrication of enhancement-mode AlGaN/GaN HEMT, and development of power integrated circuit. The possible application of high breakdown voltage AlGaN/GaNHEMT is predicted. |
来源
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半导体技术
,2010,35(5):417-422 【扩展库】
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关键词
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AlGaN/GaN高电子迁移率晶体管
;
电力电子器件
;
化合物半导体材料
;
异质结构
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地址
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1.
河北工业大学信息工程学院, 天津, 300401
2.
中国科学院半导体研究所, 北京, 100083
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语种
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中文 |
文献类型
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综述型 |
ISSN
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1003-353X |
学科
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电子技术、通信技术 |
基金
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国家自然科学基金青年科学基金
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文献收藏号
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CSCD:3894729
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36
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