纳米二氧化钒薄膜的电学与光学相变特性
Electrical and Optical Phase Transition Properties of Nano Vanadium Dioxide Thin Films
查看参考文献19篇
文摘
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采用双离子束溅射氧化钒薄膜附加热处理的方式制备了纳米二氧化钒薄膜.在热驱动方式下,分别利用四探针测试技术和傅里叶变换红外光谱技术对纳米二氧化钒薄膜的电学与光学半导体-金属相变特性进行了测试与分析.实验结果表明,电学相变特性与光学相变特性之间存在明显的偏差,电学相变温度为63℃,高于光学相变温度,60℃;电学相变持续的温度宽度较光学相变持续温度宽度宽;在红外光波段,随着波长的增加,纳米二氧化钒薄膜的光学相变温度逐渐增大,由半导体相向金属相转变的初始温度逐渐升高,相变持续的温度宽度变窄.在红外光波段,纳米二氧化钒薄膜的光学相变特性可以通过光波波长进行调控,电学相变特性更适合表征纳米VO_2薄膜的半导体-金属相变特性. |
其他语种文摘
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Nano-vanadium dioxide thin films were prepared through thermal annealing vanadium oxide thin films deposited by du-al ion beam sputtering. The nano-vanadium dioxide thin films changed its state from semiconductor phase to metal phase through heating by homemade system. Four point probe method and Fourier transform infrared spectrum technology were employed to measure and anaylze the electrical and optical semiconductor-to-metal phase transition properties of nano-vanadium dioxide thin films, respectively. The results show that there is an obvious discrepancy between the semiconductor-to-metal phase transition properties of electrical and optical phase transition. The nano-vanadium dioxide thin films' phase transiton temperature defined by electrical phase transiton property is 63 ℃, higher than that defined by optical phase transiton property at 5 μm, 60 ℃; and the temperature width of electrical phase transition duration is also wider than that of optical phase transiton duration. The semi-conductor-to-metal phase transiton temperature defined by optical properties increases with increasing wavelength in the region of infrared wave band, and the occuring temperature of phase transiton from semiconductor to metal also increases with wavelength increasing, but the duration temperature width of transition decreases with wavelength increasing. The phase transition proper-ties of nano-vanadium dioxide thin film has obvious relationship with wavelength in infrared wave hand. The phase transition properties can be tuned through wavelength in infrared wave hand, and the semiconductor-to-metal phase transition properties of nano vanadiium dioxide thin films can be better characterized by electrical property. |
来源
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光谱学与光谱分析
,2010,30(4):1002-1007 【核心库】
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DOI
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10.3964/j.issn.1000-0593(2010)04-1002-06
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关键词
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纳米二氧化钒薄膜
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光学相变
;
电学相变
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地址
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1.
天津大学电子信息工程学院, 天津, 300072
2.
中国科学院半导体研究所,半导体集成技术工程研究中心, 北京, 100083
3.
中国科学院半导体研究所, 半导体超晶格国家重点实验室, 北京, 100083
4.
中国科学院半导体研究所, 集成光电子学国家重点实验室, 北京, 100083
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语种
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中文 |
文献类型
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研究性论文 |
ISSN
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1000-0593 |
学科
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物理学 |
基金
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国家自然科学基金
;
国家863计划
;
天津市自然科学基金重点项目
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文献收藏号
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CSCD:3860550
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