锑化物超晶格红外探测器的研究进展
Research Progress in Sb-based Superlattice Infrared Detectors
查看参考文献28篇
文摘
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InAs/InGaSb超晶格具有特殊的能带结构,优越的材料性能,被认为是第三代红外探测器的首选材料.对InAs/InGaSb超晶格的材料性能、材料生长、探测器结构和探测器研究进展进行了介绍,并指出了超晶格探测器进一步发展需要解决的问题及其广阔的应用前景. |
其他语种文摘
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Because InAs/InGaSb superlattices have special energy band structure and excellent material performances, they have been chosen as the preferred candidate of the third generation infrared detectors. In this paper, the material properties, material growth, structure of detector and research progress of InAs/InGaSb superlattice detectors are briefly introduced. The issues of superlattice detectors needed to be solved and potential market applications in the future are also pointed out. |
来源
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固体电子学研究与进展
,2010,30(1):11-17 【核心库】
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关键词
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第三代红外探测器
;
砷化铟/铟镓锑
;
II类超晶格
;
双色探测器
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地址
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中国科学院半导体研究所材料科学中心, 北京, 100083
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语种
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中文 |
文献类型
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研究性论文 |
ISSN
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1000-3819 |
学科
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电子技术、通信技术 |
基金
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国家自然科学基金资助项目
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文献收藏号
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CSCD:3846134
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参考文献 共
28
共2页
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