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非晶硅太阳能电池背反ZnO:Al薄膜制备
ZINC OXIDE:ALUMINUM FILMS AS BACK REFLECTOR IN AMORPHOUS SILICON SOLAR CELLS

查看参考文献17篇

文摘 以ZnO:Al(2%Al_2O_3,质量分数)为靶材,用射频磁控溅射在玻璃衬底上制备ZnO:Al薄膜,分析了各沉积参数对薄膜光电性能的影响.结果表明:溅射功率对ZnO:Al的透过率影响最大,其次是反应腔室压力,而衬底温度对透过率几乎没有影响.ZnO:Al的电阻率主要取决于衬底温度和溅射功率.综合考虑透过率和电阻率,确定了背反ZnO:Al的最佳沉积参数(衬底温度为200℃,溅射功率为200W,反虑腔室压力为0.6Pa),得到了透过率大于85%,电阻率最小为7.6×10~(-4)Ω·cm的ZnO:Al薄膜.制备了ZnO:Al/Ag/ss(stainless steel)背反电极,并将其用于非晶硅太阳能电池.与无背反的不锈钢衬底上的电池相比,非晶硅太阳能电池短路电流密度增加了16%.
其他语种文摘 The ZnO:Al films were prepared on glass using a ZnO ceramic target with A1_2O_3 of 2% in mass by radio frequency magnetron sputtering. The effect of deposition parameters (such as sputtering power, gas pressure and substrate temperature) on the optical and electrical properties of zinc oxide:aluminum (ZnO:Al) films was investigated. The results show that the transmittance of the ZnO:Al films is mainly affected by sputtering power and gas pressure. The substrate temperature has a slight impact on the transmit tance. The resistivity of the ZnO:Al films is determined by substrate temperature and sputtering power. The deposition parameters (i.e., sputtering power: 200 W, gas pressure: 0.6 Pa and substrate temperature: 200 ℃) for both the transmittance and resistivity were opti mized. The ZnO:Al films with the high transmittance (>85%) and low resistivity (7.6×10~(-4)Ω·cm) can be obtained under the optimized sputtering conditions. The short-circuit current density of the ZnO:Al films for a ZnO:Al/Ag/ss (stainless steel) back reflector electrode in a-Si:H solar cells is higher than 16%, compared to that of the cells deposited on stainless steel substrate without back reflector.
来源 硅酸盐学报 ,2010,38(1):46-49 【核心库】
关键词 掺铝氧化锌薄膜 ; 背反电极 ; 非晶硅太阳能电池 ; 磁控溅射
地址

中国科学院半导体研究所, 北京, 100083

语种 中文
文献类型 研究性论文
ISSN 0454-5648
学科 一般工业技术
基金 国家973计划 ;  国家自然科学基金
文献收藏号 CSCD:3804368

参考文献 共 17 共1页

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引证文献 2

1 柳建平 非晶硅太阳电池背反射电极ZnO∶B 薄膜研究 半导体技术,2013,38(11):863-868
被引 0 次

2 彭寿 种子层及掺杂浓度对溶胶-凝胶法制备ZnO∶ Al薄膜光电性能的影响 硅酸盐通报,2016,35(2):543-549
被引 3

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