非晶硅太阳能电池背反ZnO:Al薄膜制备
ZINC OXIDE:ALUMINUM FILMS AS BACK REFLECTOR IN AMORPHOUS SILICON SOLAR CELLS
查看参考文献17篇
文摘
|
以ZnO:Al(2%Al_2O_3,质量分数)为靶材,用射频磁控溅射在玻璃衬底上制备ZnO:Al薄膜,分析了各沉积参数对薄膜光电性能的影响.结果表明:溅射功率对ZnO:Al的透过率影响最大,其次是反应腔室压力,而衬底温度对透过率几乎没有影响.ZnO:Al的电阻率主要取决于衬底温度和溅射功率.综合考虑透过率和电阻率,确定了背反ZnO:Al的最佳沉积参数(衬底温度为200℃,溅射功率为200W,反虑腔室压力为0.6Pa),得到了透过率大于85%,电阻率最小为7.6×10~(-4)Ω·cm的ZnO:Al薄膜.制备了ZnO:Al/Ag/ss(stainless steel)背反电极,并将其用于非晶硅太阳能电池.与无背反的不锈钢衬底上的电池相比,非晶硅太阳能电池短路电流密度增加了16%. |
其他语种文摘
|
The ZnO:Al films were prepared on glass using a ZnO ceramic target with A1_2O_3 of 2% in mass by radio frequency magnetron sputtering. The effect of deposition parameters (such as sputtering power, gas pressure and substrate temperature) on the optical and electrical properties of zinc oxide:aluminum (ZnO:Al) films was investigated. The results show that the transmittance of the ZnO:Al films is mainly affected by sputtering power and gas pressure. The substrate temperature has a slight impact on the transmit tance. The resistivity of the ZnO:Al films is determined by substrate temperature and sputtering power. The deposition parameters (i.e., sputtering power: 200 W, gas pressure: 0.6 Pa and substrate temperature: 200 ℃) for both the transmittance and resistivity were opti mized. The ZnO:Al films with the high transmittance (>85%) and low resistivity (7.6×10~(-4)Ω·cm) can be obtained under the optimized sputtering conditions. The short-circuit current density of the ZnO:Al films for a ZnO:Al/Ag/ss (stainless steel) back reflector electrode in a-Si:H solar cells is higher than 16%, compared to that of the cells deposited on stainless steel substrate without back reflector. |
来源
|
硅酸盐学报
,2010,38(1):46-49 【核心库】
|
关键词
|
掺铝氧化锌薄膜
;
背反电极
;
非晶硅太阳能电池
;
磁控溅射
|
地址
|
中国科学院半导体研究所, 北京, 100083
|
语种
|
中文 |
文献类型
|
研究性论文 |
ISSN
|
0454-5648 |
学科
|
一般工业技术 |
基金
|
国家973计划
;
国家自然科学基金
|
文献收藏号
|
CSCD:3804368
|
参考文献 共
17
共1页
|
1.
MORRIS J. Absorption enhancement in hydrogenated amorphous silicon-based solar cells.
Journal of Applied Physics,1990,67(2):1079-1087
|
被引
1
次
|
|
|
|
2.
KLUTH O. Texture etched ZnO:Al coated glass substrates for silicon based thin film solar cells.
THIN SOLID FILMS,1999,351(1/2):247-253
|
被引
27
次
|
|
|
|
3.
STAEBLER D L. Reversible conductivity changes in discharge-produced amorphous Si.
Applied Physics Letters,1977,31(4):292-294
|
被引
55
次
|
|
|
|
4.
FU E G. Substrate temperature dependence of the properties of ZAO thin firms deposited by magnetron sputtering.
Applied Surface Sinence,2003,217(1/4):88-94
|
被引
18
次
|
|
|
|
5.
SONG D Y. Effects of rf power on surface-morphological,structural and electrical properties of aluminium-doped zinc oxide films by magnetron sputtering.
Applied Surface Sinence,2008,254(13):4171-4178
|
被引
4
次
|
|
|
|
6.
SONG D Y. Investigation of lateral parameter variations of Al-doped zinc oxide films prepared on glass substrates by RF magnetron sputtering.
Solar Energy Materials and Solar Cells,2002,73(1):1-20
|
被引
10
次
|
|
|
|
7.
FU E G. Properties of transparent conductive ZnO:Al thin films prepared by magnetron sputtering.
Microelectronics Journal,2004,35(4):383-387
|
被引
9
次
|
|
|
|
8.
SONG D Y. Optimisation of ZnO:Al films by change of sputter gas pressure for solar cell application.
Applied Surface Sinence,2002,195(1/4):291-296
|
被引
19
次
|
|
|
|
9.
IGASAKI Y. Argon gas pressure dependence of the prop erties of transparent conducting ZnO:Al films deposited on glass sub strates.
Applied Surface Sinence,2001,169/170:508-511
|
被引
11
次
|
|
|
|
10.
WENAS W W. Optimization of ZnO for Front and Rear Contacts in a-Si solar Cells.
Solar Energy Materials and Solar Cells,1994,34(1/4):313-319
|
被引
1
次
|
|
|
|
11.
SOPORI B. Optical modeling of a-Si Solar Cells.
Materials Research Society Symposium Proceedings,1999,557:755-760
|
被引
1
次
|
|
|
|
12.
黄宇. 中频脉冲磁控溅射制备ZnO:Al透明导电薄膜.
光电子激光,2006,17(12):1427-1431
|
被引
2
次
|
|
|
|
13.
李微. 中频对向靶磁控溅射制备超薄ZnO薄膜及其在太阳电池中的应用.
人工晶体学报,2007,6(3):584-588
|
被引
2
次
|
|
|
|
14.
薛俊明. 用直流磁控溅射法研制非晶硅太阳电池ZnO/Al背反射电极.
人工晶体学报,2007,36(6):1283-1287
|
被引
2
次
|
|
|
|
15.
黄宇.
用于硅薄膜太阳电池的绒面ZnO透明导电薄膜的研究,2007
|
被引
1
次
|
|
|
|
16.
胡志华. 非晶硅碳(a-SiC:H)薄膜光学常数的透射谱表征.
半导体学报,2005,26(1):34-37
|
被引
5
次
|
|
|
|
17.
KIM H K. Structural,electrical and optical properties of aluminum doped zinc oxide films prepared by radio frequency magnetron sputtering.
Journal of Applied Physics,1997,81(12):7764-7772
|
被引
1
次
|
|
|
|
|