p型掺杂1.3 μm InAs/GaAs量子点激光器的最大模式增益特性的研究
Characteristic study of maximum modal gain of p-doped 1.3 μm InAs/GaAs quantum dot lasers
查看参考文献16篇
文摘
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对p型掺杂1.3 μm InAs/GaAs量子点激光器的最大模式增益进行了实验和理论分析.实验上,测量了不同腔长激光器阈值电流密度与总损耗的对应关系,拟合出的最大模式增益为17.5 cm~(-1),与相同结构非掺杂量子点激光器的最大模式增益一致.同时理论分析表明,p型掺杂对InAs/GaAs量子点激光器的最大模式增益并无影响,并且最大模式增益的计算结果与实验值相符.具有较小高度或高宽比的量子点能达到更高的最大模式增益,而较高的最大模式增益对p型掺杂1.3 μm InAs/GaAs自组织量子点激光器在光通信系统中的应用具有重要意义. |
其他语种文摘
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We report an experimental and theoretical study of maximum modal gain of p-doped 1.3 μm InAs/GaAs quantum dot (QD) lasers. The maximum modal gain of the QD laser with five stacks of QDs is as high as 17.5 cm~(-1), which is the same as that of the undoped laser with identical structures. The expression of the maximum modal gain is derived and it is indicated that p-doping has no effect to the maximum modal gain. We theoretically calculated the maximum modal gain of the QD lasers and the result is in a good agreement with the experimental data. Furthermore, QDs with lower height or smaller aspect ratio are beneficial to achieving a greater maximum modal gain that leads to lower threshold current density and higher differential modal gain, which is good for the application of p-doped 1.3 μm InAs/GaAs QD lasers in optical communications systems. |
来源
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物理学报
,2009,58(3):1896-1900 【核心库】
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DOI
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10.7498/aps.58.1896
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关键词
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最大模式增益
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p型掺杂
;
InAs/GaAs量子点激光器
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地址
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中国科学院半导体研究所纳米光电子实验室, 北京, 100083
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语种
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中文 |
文献类型
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研究性论文 |
ISSN
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1000-3290 |
学科
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物理学 |
基金
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国家高技术研究发展计划(863)
;
中国科学院“百人计划”项目
;
国家自然科学基金
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文献收藏号
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CSCD:3540519
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