剂量率对PMOS剂量计辐射响应的影响
Influence of Dose Rate on Radiation Response of PMOSFET Dosimeter
查看参考文献12篇
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文摘
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研究了不同剂量率下PMOS剂量计阈值电压的响应.在V_(TH)偏置下,观察了剂量率对PMOS剂量计辐射响应线性度和灵敏度的影响规律及其退火特性.试验结果表明:随着剂量率降低,n值趋近于1,表现出较好的线性度,响应灵敏度也增加.分析认为,PMOS剂量计有明显的低剂量率辐射敏感增强效应(ELDRS),对其损伤机理作了进一步的讨论. |
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其他语种文摘
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Response of threshold voltage shift of PMOSFET dosimeter was investigated at various dose rates. Based on V_(th)biased model, the dose-rate effects of PMOSFET dosimeter on the linearity and sensitivity and its annealing features were observed. Results showed that, as dose rate decreased, the n value tended towards 1, with better linearity and higher sensitivity, and that PMOSFET dosimeter obviously exhibited enhanced low-dose-rate sensitivity (ELDRS). And damage mechanism of ELDRS was also discussed. |
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来源
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微电子学
,2009,39(1):128-131 【扩展库】
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关键词
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PMOSFET
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剂量计
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剂量率
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阈值响应
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灵敏度
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地址
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1.
新疆大学物理科学与技术学院, 新疆, 乌鲁木齐, 830046
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中国科学院新疆理化技术研究所, 新疆, 乌鲁木齐, 830011
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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1004-3365 |
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学科
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电子技术、通信技术 |
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文献收藏号
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CSCD:3524618
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参考文献 共
12
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