|
InGaAs/InPAPD探测器光电特性检测
Measurement of the Static Optoelectronic Characteristics of InGaAs/InP Avalanche Photodiode
查看参考文献10篇
文摘
|
建立了雪崩二极管的静态光电特性的自动测试系统.利用该系统对光.敏面的直径为500岬的台面型InGaAs/InP雪崩光电二极管(APDs)进行测试.测试结果表明,该APD器件在90%击穿电压下的暗电流为151nA,在直径500μm的光敏面上其光响应均匀性良好.提出一种测量雪崩二极管倍增因子的方法,只需利用普通的测量电流一电压的测试仪器,就可以获得开始倍增时的光电流,从而得到APD的倍增因子.通过该方法得到的InGaAs/InPAPD器件最大倍增因子的典型值在10-100量级. |
其他语种文摘
|
A measurement system is set up which could measure static optoclcctronic characteristics of avalanche photodiodcs (APDs). By using this system, the mesa-structure InP/InGaAs APDs is measured. The results show that the APDs have a relatively low dark currcnt (-150 nA at 90% of breakdown) and a uniform photorcsponsc profile of about 500 μm diameter. A method of getting APDs's multiplication gain is also proposed. Through getting the photocurrcnt at the point where multiplication is beginning, the multiplication gain can bc obtained by the simple current-voltage equipment. For InP/InGaAs APDs, the typical maximum multiplication gain measured by this method is about 10-100. |
来源
|
电子科技大学学报
,2008,37(3):460-463 【核心库】
|
关键词
|
静态光电特性的自动测试系统
;
雪崩光电二极管
;
大面积APD
;
倍增因子
|
地址
|
1.
中国科学院半导体研究所, 北京, 海淀, 100083
2.
厦门大学物理系, 福建, 厦门, 361005
|
语种
|
中文 |
文献类型
|
研究性论文 |
ISSN
|
1001-0548 |
学科
|
电子技术、通信技术 |
文献收藏号
|
CSCD:3286105
|
参考文献 共
10
共1页
|
1.
罗家强. 半导体光电探测器的发展及应用.
世界电子元器件,2002,07:41-43
|
被引
1
次
|
|
|
|
2.
ERNESTO G. Development of a novel planar-construction avalanche photod IODE.
IEEE Trans Nuclear Science,2001,48(4):1211-1214
|
被引
1
次
|
|
|
|
3.
PEARSALL T P. The band structure dependence of impact ionization by hot carriers in semiconductors:GaAs.
Solid-State Electronics,1978,21:297
|
被引
2
次
|
|
|
|
4.
JIAN Wei. A highresponsivity high-bandwidth asymmetric twin-waveguide coupled InGaAs-InP-InAlAs avalanche photodiode.
IEEE Photon Technol Lett,2002,14(11):1590-1592
|
被引
1
次
|
|
|
|
5.
KINSEY G S. Waveguide avalanche photodiode operating at 1.55μm with a gain-bandwidth product of 320 GHz.
IEEE Photon Technol Lett,2001,13(8):842-844
|
被引
6
次
|
|
|
|
6.
ZHENG X G. Long-wavelength In053Ga0 47As-In0 52A10.48As large-area avalanche photodiodes and arrays.
IEEE J Quantum Electron,2004,40(8):1068-1073
|
被引
1
次
|
|
|
|
7.
ZGENG X G. 48As avalanche photodiode array.
IEEE J Quantum Electron,2002,38(11):1536-1540
|
被引
1
次
|
|
|
|
8.
MEICHIOR H. Signal and noise response of high speed germanium avalanche photodiodes.
IEEE Trans Electron Devices,1966,13:829
|
被引
1
次
|
|
|
|
9.
URGLL J. Experimental determination of the avalanche region of one-sided abrupt barriers.
Solid-State Electron,1974,17:239-244
|
被引
1
次
|
|
|
|
10.
STILLMAN G E. Long-wavelength(1.3~1 6μm)detectors for fiber-optical communications.
IEEE Trans Electron Devices,1982,29:1355-1371
|
被引
2
次
|
|
|
|
|
|