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InGaAs／InPAPD探测器光电特性检测
Measurement of the Static Optoelectronic Characteristics of InGaAs/InP Avalanche Photodiode
查看参考文献10篇
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文摘
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建立了雪崩二极管的静态光电特性的自动测试系统．利用该系统对光．敏面的直径为500岬的台面型InGaAs/InP雪崩光电二极管（APDs）进行测试．测试结果表明，该APD器件在90％击穿电压下的暗电流为151nA，在直径500μm的光敏面上其光响应均匀性良好．提出一种测量雪崩二极管倍增因子的方法，只需利用普通的测量电流一电压的测试仪器，就可以获得开始倍增时的光电流，从而得到APD的倍增因子．通过该方法得到的InGaAs／InPAPD器件最大倍增因子的典型值在10-100量级． |
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其他语种文摘
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A measurement system is set up which could measure static optoclcctronic characteristics of avalanche photodiodcs （APDs）. By using this system, the mesa-structure InP/InGaAs APDs is measured. The results show that the APDs have a relatively low dark currcnt （-150 nA at 90% of breakdown） and a uniform photorcsponsc profile of about 500 μm diameter. A method of getting APDs＇s multiplication gain is also proposed. Through getting the photocurrcnt at the point where multiplication is beginning, the multiplication gain can bc obtained by the simple current-voltage equipment. For InP/InGaAs APDs, the typical maximum multiplication gain measured by this method is about 10-100. |
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来源
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电子科技大学学报
,2008,37(3):460-463 【核心库】
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关键词
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静态光电特性的自动测试系统
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雪崩光电二极管
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大面积APD
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倍增因子
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地址
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1.
中国科学院半导体研究所, 北京, 海淀, 100083
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厦门大学物理系, 福建, 厦门, 361005
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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1001-0548 |
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学科
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电子技术、通信技术 |
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文献收藏号
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CSCD:3286105
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参考文献 共
10
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