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UHV/CVD法生长硅基低位错密度厚锗外延层
Growth of Thick Ge Epitaxial Layers with Low,Dislocation Density on Silicon Substrate by UHV/CVD

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周志文 1   蔡志猛 1   张永 1   蔡坤煌 1   周笔 1   林桂江 1   汪建元 1   李成 1   赖虹凯 1   陈松岩 1   余金中 2   王启明 2  
文摘 采用超高真空化学气相淀积系统,以高纯Si_2H_6和GeH_4作为生长气源,用低温缓冲层技术在Si(001)衬底上成功生长出厚的纯Ge外延层.对Si衬底上外延的纯Ge层用反射式高能电子衍射仪、原子力显微镜、X射线双晶衍射曲线和Ra-man谱进行了表征.结果表明在Si基上生长的约550nm厚的Ge外延层,表面粗糙度小于1nm,XRD双晶衍射曲线和Ra-man谱Ge-Ge模半高宽分别为530″和5.5cm~(-1),具有良好的结晶质量.位错腐蚀结果显示线位错密度小于5×105cm~(-2).可用于制备Si基长波长集成光电探测器和Si基高速电子器件.
其他语种文摘 Thick Ge epitaxial layers are grown on Si(001) substrates with low temperature buffer layers with ultra-high vacuum chemical vapor deposition systems using Si21-16 and GeH4 as precursors. The deposition process of.the Ge layer on Si is investigated in real time by reflection high-energy electron diffraction, and the quality of the Ge layer was evaluated by atomic force microscopy, double crystal X-ray diffraction (XRD), and Raman measurement. The root-mean-square surface roughness of the Ge epilayer with a thickness of 550nm is less than 1nm and the full-width-at-half maximum of the Ge peak of the XRD profile and the Ge-Ge mode of the Raman spectra are about 530" and 5.5cm~(-1), respectively. These measurements indicate that the Ge epitaxial layer is of good qual- ity. The etch pit density related to threading dislocations is less than 5 × 10~5 cm~(-2) . This is a promising material for Si-based long wavelength photodetectors and electronic devices
来源 半导体学报 ,2008,29(2):315-318 【核心库】
关键词 锗硅异质外延 ; 弛豫缓冲层 ;
地址

1. 厦门大学物理系半导体光子学研究中心, 福建, 厦门, 361005  

2. 中国科学院半导体研究所, 集成光电子学国家重点实验室, 北京, 100083

语种 中文
文献类型 研究性论文
ISSN 0253-4177
学科 电子技术、通信技术
基金 国家自然科学基金 ;  福建省科技计划重点项目 ;  国家教育部留学回国人员科研启动基金
文献收藏号 CSCD:3228700

参考文献 共 15 共1页

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引证文献 3

1 黄海宾 热丝CVD法在单晶硅衬底上低温外延生长Si和Ge薄膜的研究 人工晶体学报,2010,39(3):603-607
被引 5

2 周志文 Si基外延Ge薄膜中残余应变的检测与分析 光电子·激光,2012,23(9):1749-1753
被引 1

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iAuthor 链接
李成 0000-0002-3951-2092
ResearcherID 链接
李成 G-3480-2010
陈松岩 G-3340-2010
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