UHV/CVD法生长硅基低位错密度厚锗外延层
Growth of Thick Ge Epitaxial Layers with Low,Dislocation Density on Silicon Substrate by UHV/CVD
查看参考文献15篇
文摘
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采用超高真空化学气相淀积系统,以高纯Si_2H_6和GeH_4作为生长气源,用低温缓冲层技术在Si(001)衬底上成功生长出厚的纯Ge外延层.对Si衬底上外延的纯Ge层用反射式高能电子衍射仪、原子力显微镜、X射线双晶衍射曲线和Ra-man谱进行了表征.结果表明在Si基上生长的约550nm厚的Ge外延层,表面粗糙度小于1nm,XRD双晶衍射曲线和Ra-man谱Ge-Ge模半高宽分别为530″和5.5cm~(-1),具有良好的结晶质量.位错腐蚀结果显示线位错密度小于5×105cm~(-2).可用于制备Si基长波长集成光电探测器和Si基高速电子器件. |
其他语种文摘
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Thick Ge epitaxial layers are grown on Si(001) substrates with low temperature buffer layers with ultra-high vacuum chemical vapor deposition systems using Si21-16 and GeH4 as precursors. The deposition process of.the Ge layer on Si is investigated in real time by reflection high-energy electron diffraction, and the quality of the Ge layer was evaluated by atomic force microscopy, double crystal X-ray diffraction (XRD), and Raman measurement. The root-mean-square surface roughness of the Ge epilayer with a thickness of 550nm is less than 1nm and the full-width-at-half maximum of the Ge peak of the XRD profile and the Ge-Ge mode of the Raman spectra are about 530" and 5.5cm~(-1), respectively. These measurements indicate that the Ge epitaxial layer is of good qual- ity. The etch pit density related to threading dislocations is less than 5 × 10~5 cm~(-2) . This is a promising material for Si-based long wavelength photodetectors and electronic devices |
来源
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半导体学报
,2008,29(2):315-318 【核心库】
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关键词
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锗硅异质外延
;
弛豫缓冲层
;
锗
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地址
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1.
厦门大学物理系半导体光子学研究中心, 福建, 厦门, 361005
2.
中国科学院半导体研究所, 集成光电子学国家重点实验室, 北京, 100083
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语种
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中文 |
文献类型
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研究性论文 |
ISSN
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0253-4177 |
学科
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电子技术、通信技术 |
基金
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国家自然科学基金
;
福建省科技计划重点项目
;
国家教育部留学回国人员科研启动基金
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文献收藏号
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CSCD:3228700
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