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功率型GaN基LED静电保护方法研究
Analysis of ESD Protection for High Power GaN-based Light-emitting Diodes
查看参考文献9篇
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文摘
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介绍了几种常用的GaN基大功率白光发光二极管（LED）静电保护的方法，分析了GaN基大功率白光LED静电损伤的机理，并在此基础上，提出了改善GaN基大功率白光LED的抗静电损伤的途径与方法。 |
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其他语种文摘
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GaN-based light-emitting diodes are sensitive to electrostatic discharge(ESD).Several methods of ESD protection are introduced and the mechanism of ESD damage is analyzed.With this understanding,it summarizes the effective and simple methods of ESD protection for high power GaN-based light-emitting diodes.
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来源
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半导体光电
,2007,28(4):474-477 【扩展库】
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关键词
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氮化镓
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发光二极管
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静电保护
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齐纳二极管
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地址
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中国科学院半导体研究所, 北京, 100083
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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1001-5868 |
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学科
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电子技术、通信技术 |
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文献收藏号
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CSCD:2950560
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参考文献 共
9
共1页
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