纳米硅镶嵌氮化硅薄膜的制备与光致发光特性
Preparation and Photoluminescence Properties of Nanocrystalline Si Embedded in SiN Thin Films
查看参考文献14篇
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文摘
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为研究氮化硅薄膜发光材料的制备工艺及其光致发光机制,实验采用射频磁控反应溅射技术与热退火处理制备了纳米硅镶嵌氮化硅薄膜材料.利用红外光谱(IR)、X射线衍射谱(XRD)、能谱(EDS)和光致发光谱(PL),对不同工艺条件下薄膜样品的成分、结构和发光特性进行研究,发现在制备的富硅氮化硅薄膜材料中形成了纳米硅颗粒,并计算出其平均尺寸.在510 nm光激发下,观察到纳米硅发光峰,对样品发光机制进行了讨论,认为其较强的发光起因于缺陷态和纳米硅发光. |
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其他语种文摘
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In order to study preparation process and PL mechanism of silicon nitride thin films, the nc-Si (nanocrystalline Si) embedded in silicon nitride thin films were prepared by RF magnetron reaction sputtering technique and thermal annealing. Comparison with these films prepared by different process recipes such as sputtering gas pressures and annealed temperatures, IR, XRD, EDS and PL technologies were used to study the composition, structure and the luminescent properties. The results showed that the films were embedded with nc-Si particles. Under 510 nm wavelength light excitation, several room-temperature emission bands were observed in the PL spectra. The PL origins of these emission bands were discussed. The intense PL was proposed to originate from the defects and nc-Si embedded in silicon nitride film. |
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来源
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半导体技术
,2007,32(9):820-823 【扩展库】
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关键词
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射频磁控反应溅射
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氮化硅薄膜
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纳米硅
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光致发光
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地址
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1.
华侨大学,信息科学与工程学院, 福建, 泉州, 362021
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中国科学院,半导体研究所, 北京, 100083
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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1003-353X |
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学科
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电子技术、通信技术 |
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基金
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国家自然科学基金
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国家自然科学基金
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文献收藏号
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CSCD:2910954
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参考文献 共
14
共1页
|
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1.
CANHAM L T. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers.
Appl Phys Lett,1990,57:1046-1048
|
被引
389
次
|
|
|
|
|
2.
郭亨群. 纳米Si镶嵌SiO2薄膜的发光与非线性光学特性的应用.
半导体学报,2006,27(2):345-349
|
被引
10
次
|
|
|
|
|
3.
LIU Y Z. Study of photoluminescence spectra of Si-rich SiNx films.
Materials Letters,2004,58(1):2397-2400
|
被引
11
次
|
|
|
|
|
4.
GRITSENKO V A. Silicon dots/clusters in silicon:photoluminescence and electron spin resonace.
Thin Solid Films,1999,353:20-24
|
被引
6
次
|
|
|
|
|
5.
王颖. 富硅量不同的富硅氮化硅薄膜的光致发光研究.
液晶与显示,2005,20(2):103-106
|
被引
6
次
|
|
|
|
|
6.
KIM T W. Quantum confinement effect in crystalline silicon quantum dots in silicon nitride grown using SiH4 and NH3.
Appl Phys Lett,2006,88:123102-123104
|
被引
15
次
|
|
|
|
|
7.
MO C M. Luminescence of nanometer-sized amorphous silicon nitride solids.
J Appl Phys,1993,73(10):5185-5188
|
被引
16
次
|
|
|
|
|
8.
王善忠. a-Si↓3N↓4纳米粒子的激光法制备及能级结构研究.
物理学报,1994,43(4):627-631
|
被引
6
次
|
|
|
|
|
9.
黄慧忠.
纳米材料分析,2003
|
被引
1
次
|
|
|
|
|
10.
FEJFAR A. Hydrogen and nitrogen bonding in silicon nitride layers deposited by layer reactive ablation:Infrared and X-ray photoelectron study.
Appl Phys Lett,1995,67:3269-3271
|
被引
7
次
|
|
|
|
|
11.
孟祥森. 低温A PCVD法制备氮化硅薄膜.
陶瓷学报,1999,20:3
|
被引
1
次
|
|
|
|
|
12.
CHOO C K. Preparation and evaluation of nitrogen-terminated silicon nanoparticles:laser annealing effect.
Surface Science,2000,445:480-487
|
被引
3
次
|
|
|
|
|
13.
PEI Z. Formation of silicon nano-dots in luminescent silicon nitride.
Appl Surf Sci,2003,212:760-764
|
被引
5
次
|
|
|
|
|
14.
KIM T Y. Quantum confinement effect of silicon nanocrystals in situgrown in silicon nitride films.
Appl Phys Lett,2004,85:5355
|
被引
11
次
|
|
|
|
|
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