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PECVD沉积SiO_2和SiN_x对p-GaN的影响
Influence of PECVD generated SiO_2 and SiNx layers on p-GaN
查看参考文献9篇
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文摘
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在等离子增强化学气相沉积法（PECVD）沉积SiO_2和SiNx掩蔽层过程中，分解等离子体中浓度较高的H原子使Mg~-受主钝化，同时在p-GaN材料表面发生反应形成浅施主特性的N_v~+，空位。高能量离子轰击造成的材料深能级缺陷增多以及沉积形成致密的SiO_2和SiN_x材料，阻碍了H原子向外扩散，使H原子在Ni／Au电极与p-GaN的界面处聚集，造成p-GaN近表面附近区域Mg-H络合物密度的提高，空穴浓度急剧下降，导致Ni／Au透明电极I-V特性严重恶化。选择较低的射频功率（15W，13．56MHz）沉积模式，经过适当的退火，可以减小沉积SiO_2过程对p-GaN的影响。 |
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其他语种文摘
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The I-V characteristics of the Ni/Au Schottky contacts will get worse after SiO_2 and SiN_x deposition on p-GaN through PECVD. The main degradation mechanism appears to be the competition between the decreases of the hydrogen passivation of Mg acceptors and the ion-induced deep traps, and the increases of the creation of nitrogen vacancies and the gathering of hydrogen in p-GaN material in the course of PECVD deposition. Ion -induced damage did appear to play a significant role. Influence of PECVD generated SiO_2 passivation layers on p-GaN were reduced when using low RF power（15 W, 13.56 MHz） and porforming post annealing. |
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来源
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红外与激光工程
,2007,36(2):214-218 【扩展库】
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关键词
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等离子增强化学气相沉积法
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SiO_2
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SiNx
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p-GaN
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I-V特性
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地址
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1.
中科院半导体研究所半导体集成技术工程研究中心, 北京, 100083
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贝联（上海）有限公司, 上海, 200118
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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1007-2276 |
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学科
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电子技术、通信技术 |
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基金
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国家科技攻关计划项目
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文献收藏号
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CSCD:2857619
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参考文献 共
9
共1页
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1.
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被引
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2.
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4.
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被引
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5.
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被引
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被引
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7.
Kim Hyunsoo. Effect of an oxidized Ni/Au p-contact on the performance of GaN/InGaN multiple quantum well light-emitting diodes.
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8.
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9.
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被引
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