AIGaN/GaN HEMTs Power Amplifier MIC with Power Combining at C-Band
基于AlGaN/GaN HEMT的C波段混合集成功率合成放大器的设计

Yao Xiaojiang ¹ Li Bin ² Chen Yanhu ¹ Chen Xiaojuan ¹ Wei Ke ¹ Li Chengzhan ¹ Luo Weijun ³ WANG Xiaoliang ³ Liu Dan ¹ Liu Guoguo ¹ Liu Xinyu ¹

文摘	A power amplifier MIC with power combining based on AlGaN/GaN HEMTs was fabricated and measured. The amplifier consists of four 10×120μm transistors. A Wilkinson splitters and combining were used to divide and combine the power. By biasing the amplifier at V_(DS) =40V, I(DS)= 0. 9A, a maximum CW output power of 41. 4dBm with a maximum power added efficiency (PAE) of 32. 54% and a power combine efficiency of 69% was achieved at 5. 4GHz.
其他语种文摘	研制了一种基于AlGaN/GaN HEMT的功率合成技术的混合集成放大器电路.该电路包含4个10×120 μm的HEMT晶体管以及一个Wilkinson功率合成器和分配器.在偏置条件为V_(DS)=40V,I_(DS)=0.9A时,输出连续波饱和功率在5.4GHz达到41.4dBm,最大的PAE为32.54%,并且功率合成效率达到69%.
来源	半导体学报 ,2007,28(4):514-517 【核心库】
关键词	AlGaN/GaN HEMTs ; power combining ; MIC ; power amplifiers
地址	1. Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 2. Longrui Microelectronic Corporation, Chengdu, 610041 3. Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083
语种	英文
文献类型	研究性论文
ISSN	0253-4177
学科	电子技术、通信技术
基金	国家973计划 ; 中国科学院知识创新工程重点项目
文献收藏号	CSCD:2821653

参考文献共 7 共1页

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引证文献 1 篇

1 Ma Xinyu A 500-600 MHz GaN power amplifier with RC-LC stability network Journal of Semiconductors,2017,38(8):085003-1-085003-4
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