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低能氦离子注入引入的量子阱混杂带隙波长蓝移
Low Energy Helium Ion Implantation Induced Quantum-Well Intermixing
查看参考文献9篇
文摘
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提出了采用低能氦离子注入多量子阱(MQW)材料和合适的快速退火条件,实现了MQW带隙波长的蓝移.用这种材料制作了FP腔激光器,与未注入器件相比,实现了37nm的激射波长蓝移. |
其他语种文摘
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Low energy helium ion implantation into InP heterostructures that induces controlled quantum well intermixing is reported and used for the first time. A significant blue-shift enhanced by a moderate RTA process is achieved. An intermixed FP laser is fabricated. Compared to the unimplanted laser,the lasing wavelength of the intermixed laser blue-shifts by 37nm. |
来源
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半导体学报
,2007,28(1):47-51 【核心库】
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关键词
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He^+离子注入
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低能量
;
量子阱混杂
;
蓝移
;
FP腔激光器
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地址
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中国科学院半导体研究所, 北京, 100083
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语种
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中文 |
文献类型
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研究性论文 |
ISSN
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0253-4177 |
学科
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电子技术、通信技术 |
基金
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国家自然科学基金资助项目
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文献收藏号
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CSCD:2741728
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参考文献 共
9
共1页
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