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文摘
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在6H-SiC衬底上,外延生长了AlGaN/GaN HEMT结构,设计并实现了高性能1mm AlGaN/GaN微波功率HEMT,外延材料利用金属有机物化学气相淀积技术生长.测试表明,该1mm栅宽器件栅长为0.8μm,输出电流密度达到1.16A/mm,跨导为241mS/mm,击穿电压＞80V,特征频率达到20GHz,最大振荡频率为28GHz.5.4GHz连续波测试下功率增益为14.2dB,输出功率达4.1W,脉冲条件测试下功率增益为14.4dB,输出功率为5.2W,两端口阻抗特性显示了在微波应用中的良好潜力. |
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其他语种文摘
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This paper reports a high-performance AlGaN/GaN HEMT with 1mm gate width on 6H-SiC substrate. The epitaxial materials of the device are grown with metal organic chemical vapor deposition. Test results indicate that the gate length of the device is 0.8μm, the output current density is 1.16A/mm, the transconductance is 241mS/mm, the breakdown voltage is greater than 80V,the current gain cutoff frequency reaches 20GHz,and the power gain cutoff frequency is 28GHz. The power gain of a continuous wave at 5.4GHz is 14.2dB, with an output power of 4.1W, while the corresponding results of pulsed power test are 14.4dB and 5.2W. Two ports impedance characteristics demonstrate good potential in microwave applications. |
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来源
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半导体学报
,2006,27(11):1981-1983 【核心库】
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关键词
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AlGaN/GaN
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高电子迁移率晶体管
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微波功率
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功率增益
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地址
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1.
中国科学院半导体研究所, 北京, 100083
2.
中国科学院微电子研究所, 北京, 100029
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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0253-4177 |
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学科
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电子技术、通信技术 |
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基金
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国家973计划
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中国科学院知识创新工程重点项目
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文献收藏号
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CSCD:2615852
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被引
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被引
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