升华法生长AlN体单晶初探
Study of Sublimation Crystal Growth of Bulk AlN
查看参考文献22篇
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文摘
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研究了高温升华法（PVT）生长AlN体单晶的技术和材料的性质.使用陶瓷BN坩埚,加热温度约在1900℃左右,生长结果为AlN晶须或致密多晶,难以生长出较大的AlN晶粒.用钨坩埚加热生长温度达到2200℃左右时,在AlN陶瓷片和6H-SiC片上生长了直径22mm的AlN晶体,最大的晶粒尺寸长10mm、直径5mm.利用X射线粉末衍射分析了几种不同AlN样品的结构和组成.讨论了PVT法生长AlN晶体所涉及的化学热力学过程和现象. |
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其他语种文摘
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Experimental results of bulk AlN crystal growth by physical vapor transport （PVT） and its characterization are presented. A growth temperature of 1900℃ is reached by RF coil heating of the AlN source material contained in a BN crucible. Thin needle crystals and dense polycrystals are obtained in this case. It is difficult to grow large AlN crystals using a BN crucible. A growth temperature of 2200℃ is reached by RF induction heating of the source material contained with a tungsten crucible. AlN crystals in a diameter of 22mm are grown on AlN ceramic plate and 6H-SiC wafer, respectively,of which the largest grain size is 10mm in length and 5mm in diameter. The structure and component of several AlN samples are analyzed using X-ray powder diffraction. The chemical thermodynamic process and growth phenomena related to the AlN PVT growth are discussed. |
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来源
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半导体学报
,2006,27(7):1241-1245 【核心库】
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关键词
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氮化铝
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晶体
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升华法
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地址
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中国科学院半导体研究所, 北京, 100083
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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0253-4177 |
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学科
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电子技术、通信技术 |
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文献收藏号
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CSCD:2551445
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