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文摘
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用高温扩散方法制备出补偿Si∶(B,Mn)材料,并研究了这种材料的电流振荡参数与光照和电场之间的关系.结果表明:在一定光照和电场范围内(276～305V/cm),电阻率为104Ω·cm的材料在液氮温度下显示出电流振荡特性;在一定的电场下,电流振荡波形是固定的,不随时间变化;振荡频率随光照强度的增大而线性增大;调制系数随着光强的增强而减弱;振荡的最大值随着光照强度增大而减小,最小值随着光强增大而缓慢增大. |
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其他语种文摘
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Compensated material Si : (B,Mn) is prepared by high temperature diffusion. The relation between the current oscillation parameters of this material and light intensity and electric field is studied. The experiment shows that: (1) In certain light intensity and electric field ranges (145~305V/cm) the material Si : (B,Mn) with a resistivity of l01n o cm exhibits a current oscillation phenomenon at liquid nitrogen temperature! (2) At a certain electric field, the waveform of the current oscillation is stable and does not change with time; (3) The dependence relation between the oscillation frequency and light-intensity can be expressed by / = /0(L/L0)a where Lo is the minimum light-intensity needed to stimulate oscillation,/0 is the frequency under Lo ,L is the intensity of the light,and a is a coefficient that increase with electric fields (4) The modulating coefficient K(K = (/m,ix - /mm)/Amu) decreases as the light increasesj(5) The maximum value of the oscillation /,"" decreases with the increase of the light-intensity while the minimum value of oscillation /miT1 increases slowly. |
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来源
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半导体学报
,2006,27(9):1582-1585 【核心库】
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关键词
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硅
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掺杂
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补偿
;
电流振荡
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地址
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1.
中国科学院新疆理化技术研究所, 乌鲁木齐, 830011
2.
乌兹别克斯坦国立技术大学
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语种
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中文 |
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文献类型
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研究性论文 |
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ISSN
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0253-4177 |
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学科
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电子技术、通信技术 |
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基金
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新疆乌鲁木齐市科技局科技攻关项目
;
中国科学院西部之光人才培养计划
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文献收藏号
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CSCD:2433822
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1.
张建.
高补偿硅的阻-温特性,2004,23(4):19
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被引
1
次
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2.
张建. 补偿硅的温度敏感特性.
电子元件与材料,2004,23(5):24
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被引
2
次
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3.
张建. 补偿硅的温度敏感特性.
电子元件与材料,2004,23(6):23
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被引
12
次
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4.
蔡志军. 深能级杂质Zn对n型硅半导体的补偿特性.
半导体学报,2005,26(6):1140
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被引
5
次
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5.
蔡志军. Zn掺杂n型硅材料的补偿研究.
电子元件与材料,2005,24(6):24
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被引
3
次
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6.
Bakhadyrkhanov M K. Control of the excitation conditions and the parameters of self-sustained oscillations of current in compensated silicon doped with manganese.
Semiconductors,2000,34(2):171
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被引
1
次
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被引
10711
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被引
10711
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